M5M5408BFP-55H MITSUBISHI, M5M5408BFP-55H Datasheet
M5M5408BFP-55H
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M5M5408BFP-55H Summary of contents
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... Easy memory expansion by S • Common Data I/O • Three-state outputs: OR-tie capability • OE prevents data contention in the I/O bus • Process technology: 0.25µm CMOS • Package: M5M5408BFP: 32 pin 525 mil SOP M5M5408BTP/RT: 32 pin 400 mil TSOP(ll) Stand-by current Icc , Vcc=3.0V (PD) typical * Ratings (max.) 25° ...
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... M5M5408BFP/TP/RT PIN CONFIGURATION (TOP VIEW) 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM GND (0V) 16 Outline 32P2M-A (FP) 32P3Y-H (TP) (5V ...
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... M5M5408BFP/TP/RT FUNCTION The M5M5408BFP,TP,RT is organized as 524,288-words by 8-bit. These devices operate on a single +5.0V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. A write operation is executed during the S low and W low overlap time ...
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... M5M5408BFP/TP/RT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage V cc Input voltage Output voltage O P Power dissipation d Operating T a temperature T Storage temperature stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter High-level input voltage Low-level input voltage IL V High-level output voltage 1 OH1 V High-level output voltage 2 ...
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... MITSUBISHI ELECTRIC MITSUBISHI LSIs DQ 990 CL Including scope and jig capacitance Fig.1 Output load Limits M5M5408BFP,TP,RT-70 Max Min Max Limits M5M5408BFP,TP,RT-70 Max Min Max 1.8k CL Units ...
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... M5M5408BFP/TP/RT (4)TIMING DIAGRAMS Read cycle A 0~18 S (Note3) OE (Note3 "H" level DQ 1~8 Write cycle ( W control mode ) A 0~18 S (Note3 1~8 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM ( ( (OE ( (A- (W) ...
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... M5M5408BFP/TP/RT Write cycle (S control mode (Note3) DQ 1~8 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during the overlap of a low S and a low W. Note goes low simultaneously with or prior to S,the output remains in the high impedance state. Note 6: Don't apply inverted phase signal externally when DQ pin is in output mode. ...
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... M5M5408BFP/TP/RT POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD) Chip select input (S) Power down Icc (PD) supply current (2) TIMING REQUIREMINTS Symbol Parameter t Power down set up time su (PD) Power down recovery time t rec (PD) (3) TIMING DIAGRAM ...
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... M5M5408BFP/TP/RT Revision History Revision No. History K0.1e The first edition K0.2e 1) Icc3 limit revised 2) Icc(PD) limit revised 3) Icc1,Icc2 conditions revised K0. Icc3 limit (typ) revised K1.0e The first product version K1.1e Product Lineup Revised 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM Vcc Level in the Block Diagram revised ...
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... Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...