M5M51008DVP-70H MITSUBISHI, M5M51008DVP-70H Datasheet

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M5M51008DVP-70H

Manufacturer Part Number
M5M51008DVP-70H
Description
1048576-bit (131072-word by 8-bit) SMOS static RAM
Manufacturer
MITSUBISHI
Datasheet

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DESCRIPTION
FEATURES
APPLICATION
Small capacity memory units
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static
RAM organized as 131072 word by 8-bit which are fabricated using
high-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and
CMOS periphery result in a high density and low power static
RAM.
for the battery back-up application.
outline package which is a high reliability and high density surface
mount device(SMD). Two types of devices are available.
M5M51008DVP(normal lead bend type package),
M5M51008DRV(reverse lead bend type package).Using both types
of devices, it becomes very easy to design a printed circuit board.
M5M51008DFP,VP,RV,KV-55H
M5M51008DFP,VP,RV,KV-70H
The M5M51008DVP,RV,KV are packaged in a 32-pin thin small
They are low standby current and low operation current and ideal
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008DFP
M5M51008DVP,RV ············ 32pin 8 X 20 mm
M5M51008DKV
Type name
············ 32pin 525mil
············ 32pin 8 X 13.4 mm
Access
(max)
time
55ns
70ns
(1MHz)
(1MHz)
Active
(max)
15mA
Power supply current
SOP
1
,S
2
2
2
TSOP
(Vcc=5.5V)
TSOP
stand-by
20µA
(max)
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
MITSUBISHI
ELECTRIC
M5M51008DFP,VP,RV,KV,KR -55H, -70H
PIN CONFIGURATION (TOP VIEW)
ADDRESS
OUTPUTS
A
A
A
A
A
A
A
NC
V
A
S
W
A
A
A
A
A
A
A
A
W
S
A
V
NC
A
A
A
A
A
A
A
INPUTS/
4
5
6
7
12
14
16
CC
15
2
13
8
9
11
INPUTS
11
9
8
13
2
15
CC
16
14
12
7
6
5
4
DATA
16
15
14
13
12
11
10
10
11
12
13
14
15
16
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
9
9
8
Outline 32P3H-E(VP), 32P3K-B(KV)
NC
A
DQ
DQ
DQ
GND
A
A
A
A
A
A
A
A
A
A
16
14
12
7
6
5
4
3
2
1
0
Outline 32P2M-A(FP)
1
2
3
Outline 32P3H-F(RV)
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
M5M51008DVP,KV
M5M51008DRV
MITSUBISHI LSIs
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC : NO CONNECTION
V
W
DQ
DQ
DQ
DQ
DQ
A
S
A
A
A
A
OE
A
S
CC
15
2
13
8
9
11
10
1
8
7
6
5
4
OUTPUT ENABLE
INPUT
ADDRESS
INPUT
CHIP SELECT
INPUT
WRITE CONTROL
INPUT
ADDRESS
INPUT
CHIP SELECT
INPUT
DATA
INPUTS/
OUTPUTS
ADDRESS
INPUTS
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
32
31
30
29
28
27
26
25
24
23
22
21
20
Ver. 1.1
OE
A
S
DQ
DQ
DQ
DQ
DQ
GND
DQ
DQ
DQ
A
A
A
A
A
A
A
A
DQ
DQ
DQ
GND
DQ
DQ
DQ
DQ
DQ
S
A
OE
10
1
0
1
2
3
3
2
1
0
1
10
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
1

Related parts for M5M51008DVP-70H

M5M51008DVP-70H Summary of contents

Page 1

... They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. ...

Page 2

... Active Dout Active Active 131072 WORDS X 8 BITS (512 ROWS X128 COLUMNS X 16BLOCKS) CLOCK GENERATOR MITSUBISHI ELECTRIC MITSUBISHI LSIs at a high level low level, the chip are The power supply current is reduced as low as the CC3 CC4 * 21 22 ...

Page 3

... other inputs=0~V CC Test conditions FP,VP,RV,KV V =GND, V =25mVrms, f=1MHz I I FP,VP,RV,KV V =GND,V =25mVrms, f=1MHz O O MITSUBISHI ELECTRIC MITSUBISHI LSIs Ratings – 0.3*~7 – 0.3*~Vcc + 0.3 0~Vcc 700 0~70 – 65~150 Limits Min Typ Max 2.2 Vcc + 0.3 0.3* – 2.4 Vcc – 0.5 55ns 39 70ns 34 1MHz 4 55ns 42 70ns ...

Page 4

... BY 8-BIT)CMOS STATIC RAM (Ta=0~70°C, 5V±10% unless otherwise noted ) =0.6V (-70H) =0.0V (-55H) (-55H) (for dis , dis high 1 low 2 low 1 high 2 MITSUBISHI ELECTRIC Ver. 1.1 MITSUBISHI LSIs V CC 1.8k DQ 990 C ( Including scope L Fig.1 Output load Limits -55H -70H Min Max Min Max ...

Page 5

... (S1) (Note (S2) (Note (A-WH (A) w (W) t dis (W) t dis (OE) DATA IN STABLE t su (D) MITSUBISHI ELECTRIC MITSUBISHI LSIs t v (A) (Note 3) t dis (S1) (Note 3) t dis (S2) t (Note 3) dis (OE) DATA VALID (Note 3) (Note 3) t rec (W) t en(OE ( (D) Ver ...

Page 6

... DATA IN STABLE (A) su (S2) rec (W) (Note 5) (Note ( (D) DATA IN STABLE high overlaps S and W low the outputs are maintained in the high impedance state. 2 MITSUBISHI ELECTRIC Ver. 1.1 MITSUBISHI LSIs (Note 3) (Note 3) (Note 3) (Note ...

Page 7

... Test conditions 4. (PD – 0. ,the input level 0.2V. The other pins(Address,I/O,WE,OE) can be in high impedance state (PD) S 0.2V 2 MITSUBISHI ELECTRIC MITSUBISHI LSIs Limits Min Typ Max 2.0 2.2 Vcc(PD) 0.8 0.2 ~25° ~40°C ~70°C 10 Limits Min Typ Max ...

Page 8

... All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein ...

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