QM50TX-HB MITSUBISHI, QM50TX-HB Datasheet - Page 4

• Manufacturer Part Number: QM50TX-HB
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
10
FORWARD BIAS SAFE OPERATING AREA
–1
7
5
4
3
2
7
5
4
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2 T
10
10
1
0
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
0
NON-REPETITIVE
BASE REVERSE CURRENT –I
CHARACTERISTIC (TRANSISTOR)
C
V
I
I
2
2
2 3 5 7
B1
C
=25°C
CC
SWITCHING TIME VS. BASE
=50A
2 3 4 5 7
=100mA
3
3
=300V
T
T
5
5
CURRENT (TYPICAL)
j
j
=25°C
=125°C
7
7
10
10
t
t
10
f
s
1
–2
1
TIME (s)
2
2
2
10
3
3
3
0
5
5 7
5
7
7
10
2 3 4 5 7
10
10
–1
2
2
2
2
3
3
B2
5
5
(A)
CE
7
7
10
(V)
10
10
1
0
3
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0.2
0 100
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
20
=125°C
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
DISSIPATION
MEDIUM POWER SWITCHING USE
COLLECTOR
0.6
200
40
300 400 500
60
I
B2
1.0
–V
=–3.5A
CEO
80 100 120 140
(V)
1.4
SECOND
BREAKDOWN
AREA
QM50TX-HB
600 700
I
T
T
B2
j
j
=25°C
=125°C
C
1.8
=–1.5A
INSULATED TYPE
( C)
CE
160
800
2.2
(V)
Feb.1999