6MBP50RTB060 Fuji Electric holdings CO.,Ltd, 6MBP50RTB060 Datasheet - Page 2

• Manufacturer Part Number: 6MBP50RTB060
• Manufacturer: Fuji Electric holdings CO.,Ltd

6MBP50RTB060
*9 : (For 1 device, Case is under the device)
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Limiting resistor for alarm
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Common mode rectangular noise
Common mode lightning surge
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Weight
Over Current Protection Level of Inverter circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
INV
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
Protection Section ( Vcc=15V)
Thermal characteristics( Tc=25°C)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Recommendable value
Weight
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Control circuit
Collector-Emitter saturation voltage
Collector current at off signal input
Forward voltage of FWD
Item
Item
Item
Item
Item
Item
Item
INV
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
I
I
V
V
t
R
Symbol
I
V
V
ton
toff
trr
P
ALM
ccp
CCN
CES
I
t
t
T
T
T
T
V
V
Condition
in(th)
ALM
Symbol
Z
OC
DOC
SC
CE(sat)
F
AV
Symbol
jOH
jH
COH
CH
UV
H
IGBT
FWD
IC=50A Fig.1, Fig.6
VDC=300V, IC=50A Fig.1, Fig.6
VDC=300V,Tj=125°C
V
Ic=50A
-Ic=50A
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Main circuit wiring inductace=54nH
Internal wiring inductance=50nH
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
surface of IGBT chips
VDC=0V, Ic=0A, Case temperature
CE
Condition
Condition
=600V Vin terminal open.
Condition
Rth(j-c)
Rth(j-c)
Rth(c-f)
Symbol
Terminal
Chip
Terminal
Chip
V
V
Symbol
-
Symbol
Wt
DC
CC
Min.
Min.
Min.
Min.
-
-
-
±2.0
±5.0
13.5
-
2.5
Min.
-
30
1.2
-
-
-
-
-
-
-
1425
Min.
Min.
1.1
Typ.
75
-
-
150
-
110
-
Typ.
15.0
Typ.
Typ.
11.0
-
-
-
-
-
450
-
0.05
-
-
-
1.00
1.25
0.2
-
-
Typ.
2.0
1.6
-
-
-
-
-
-
-
1500
Typ.
1.263
Typ.
400
2.0
20
20
Max.
Max.
0.87
-
-
-
-
Max.
16.5
Max.
1.35
1.60
8.0
5
0.5
-
-
-
-
3.0
-
-
Max.
IGBT-IPM
-
-
1.0
2.5
2.6
3.6
0.3
-
-
-
-
1575
125
Max.
18
65
Max.
12.5
°C/W
°C/W
°C/W
-
-
-
4.0
8
Unit
1.70
1.95
-
-
-
-
-
-
Unit
Unit
Unit
kV
kV
Nm
g
V
V
Unit
-
mA
Unit
mJ
ohm
Unit
µs
mA
mA
ms
ms
ms
V
V
V
V
V
A
µs
µs
°C
°C
°C
V