2MBI600VJ-120-50 Fuji Electric holdings CO.,Ltd, 2MBI600VJ-120-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI600VJ-120-50
• Manufacturer: Fuji Electric holdings CO.,Ltd

2MBI600VJ-120-50
Characteristics (Representative)
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1400
1200
1000
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
1000
100
0
0
10
VGE= 0V, ƒ= 1MHz, Tj= 25°C
1
0
Collector-Emitter Voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
1
1
VGE= 15V / chip
Tj= 25°C / chip
Tj=25°C
[INVERTER]
[INVERTER]
[INVERTER]
VGE=20V15V
10
2
2
Coes
Cies
Cres
3
3
125°C
20
150°C
4
4
12V
10V
8V
30
5
5
2
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
1400
1200
1000
800
600
400
200
10
8
6
4
2
0
0
5
0
0
Vcc=600V, Ic=600A, Tj= 25°C
VCE
Dynamic Gate Charge (typ.)
1000
Collector-Emitter voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
1
Tj= 150°C / chip
10
[INVERTER]
Gate charge: Qg [nC]
[INVERTER]
[INVERTER]
2000
Tj= 25°C / chip
VGE= 20V
2
3000
15
3
4000
15V
VGE
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20
5000
4
Ic=1200A
Ic=600A
Ic=300A
IGBT Modules
12V
10V
8V
6000
25
5