PM50RSK060 MITSUBISHI, PM50RSK060 Datasheet
PM50RSK060
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PM50RSK060 Summary of contents
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... Third Generation Low Profile Series - 600V PM10CSJ060 10 Six IGBTs PM15CSJ060 15 Six IGBTs PM20CSJ060 20 Six IGBTs PM30CSJ060 30 Six IGBTs PM50RSK060 50 Six IGBTs + Brake ckt. PM75RSK060 75 Six IGBTs + Brake ckt. Third Generation Low Profile Series - 1200V PM10CZF120 10 Six IGBTs PM10RSH120 10 Six IGBTs + Brake ckt. ...
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... Power MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES chips and gate control circuit com- ponents are soldered directly to the substrate eliminating the need for a separate printed circuit board and ceramic isolation materials ...
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... EMI noise immunity. Figure 6.4 shows the structure of a ceramic isolated Intelligent Power Module. Figure 6 PM75RSA060 75 A, 600V IPM. MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Figure 6.4 Ceramic Isolation Construction MAIN TERMINAL CASE ...
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... V-Series IPM Construction POWER TERMINALS SIGNAL TERMINALS COVER PRINTED CIRCUIT BOARD BASE PLATE MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES costs as well as providing improve- ment in system performance and reliability over conventional IGBTs. Design and development effort is simplified and successful drive co- ...
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... Turn-Off Crossover Time c(off) I Collector-Emitter Cutoff CES MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Definition Maximum DC bus voltage applied between P-N Maximum off-state collector-emitter voltage at applied control input off signal Maximum DC collector and FWDi current @ T Maximum peak collector and FWDi current @ T ...
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... CE EC performed as low duty factor pulsed tests. (See Figures 6.8 and 6.9) MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Definition Range of allowable control supply voltage in switching operation Control supply current in stand-by mode A voltage applied between input (I) and ground (C) pins less than this value will turn on the IPM ...
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... V rating of CES the device. (These tests must not be attempted using a curve tracer.) MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Figure 6.10 Half-Bridge Test Circuit and Switching Time Definitions + OFF V D SIGNAL ...
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... IPM will operate safely as long as the DC bus voltage is below the data sheet V specification, CC(prot) the turn-off transient voltage across C-E terminals of each IPM switch is MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES maintained below the V specifi- CES cation less than 125 C, and ...
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... UV LOCK-OUT OVER CURRENT FAULT SHORT CIRCUIT OUTPUT ISOLATING INTERFACE CIRCUIT MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES operation and timing of each pro- tection feature is described in Sec- tions 6.4.2 through 6.4.5. 6.4.2 Control Supply Under-Voltage Lock-Out The Intelligent Power Module's in- ternal control circuits operate from an isolated 15V DC supply ...
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... OC protection on short pulses of current above the OC level that are not dangerous for the power device. When an over-cur- MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES rent is detected a controlled shut- down is initiated and a fault output is generated. The controlled shut- ...
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... Figure 6.18 OC Operation of PM200DSA060 (I OC PROTECTION WITHOUT SOFT SHUTDOWN V CE (surge MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES current conditions. Even resistive and inductive shorts to ground that are often missed by conventional desaturation and bus current sens- ing protection schemes will be de- tected by the IPMs current sense IGBTs ...
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... MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Note: The short circuit protection in V-Series IPMs has a delay similar to the third generation over current protection function described in 6 ...
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... Inverter peak current is based on 200% overload requirement and a 20% current ripple factor. MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Current Inverter Peak Current (A)* 6.8 9.5 12.2 17 PM50RSA060, PM50RSK060 75 PM75RSA060, PM75RSK060 95 PM75RSA060, PM75RSK060 143 PM100CSA060, PM100RSA060 183 PM150CSA060, PM150RSA060 231 PM200CSA060, PM200RSA060, 271 ...
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... COLLECTOR CURRENT, I APPLICABLE TYPES: THIRD-GENERATION IPM PM200DSA060, PM300DSA060, PM75DSA120, PM100DSA120, PM300DSA120, PM100CSA060, PM75CSA120, PM100CSA120, PM20CSJ060, PM300CSJ060, PM50RSK060, PM75RSA060, PM10RSH120, PM15RSH120, Applicable IPM Minimum SC Trip (A) PM75RVA060 PM100CVA060 PM150CVA060 PM200CVA060 PM300CVA060 PM400DVA060 PM600DVA060 PM50RVA120 PM75CVA120 PM100CVA120 PM150CVA120 PM200DVA120 PM300DVA120 for Third Generation IPMs ...
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... P. 10kHz DC LOSS 150 SW LOSS TOTAL LOSS 100 120 160 200 240 I (ARMS) O MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Figure 6.22 Power Loss Simulation of PM75RVA060 (Typ.) 250 V = 300V 15V 125°C 200 j P. 10kHz DC LOSS ...
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... DC LOSS 200 SW LOSS TOTAL LOSS 150 100 100 120 140 160 I (ARMS) O MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Figure 6.31 Power Loss Simulation of PM100CVA120 (Typ.) 350 V = 600V 15V 300 125°C j P.F. = 0.8 250 fc = 10kHz ...
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... Max 600V Series PM10CSJ060 18 25 PM15CSJ060 18 25 PM20CSJ060 18 25 PM30CSJ060 18 25 PM100CSA060 40 55 PM150CSA060 40 55 PM200CSA060 40 55 PM30RSF060 25 30 PM50RSA060 44 60 PM50RSK060 44 60 PM75RSA060 44 60 PM100RSA060 44 60 PM150RSA060 52 72 PM200RSA060 52 72 PM200DSA060 19 26 PM300DSA060 19 26 PM400DSA060 23 30 PM600DSA060 23 30 PM800HSA060 23 30 ...
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... DC-to-DC converters at a lower cost. In order to simplify the design of the required isolated power sup- plies, Mitsubishi has developed two DC-to-DC converter modules to work with the IPMs. The M57120L is a high input voltage step down converter. When supplied with 113 to 400VDC the M57120L will pro- duce a regulated 20VDC output ...
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... 0 HCPL4504 PC817 20V + NOTE: FOR C1 AND C2 SEE SECTION 6.6.3 MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES 20k 20k 20k ...
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... Any layout that increases the primary to secondary capaci- tance of the isolating interface can cause noise problems. MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES ...
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... DIGITAL GROUND MID-LAYER SHIELD U P MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES - + - + - + + - - + - + SHIELDS GROUND TO NEGATIVE SIDE OF EACH CONTROL POWER SUPPLY CONTROL POWER ...
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... Example Interface Circuits IPM (Intelligent Power Modules) are designed to use optocoupled transistors for control input and fault output interfaces. In most ap- plications optocouplers will provide MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES INTERFACE CIRCUIT simple and inexpensive isolated interface to the system controller. ...
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... BRAKE 4.7k U INPUT 0 INPUT 0 0 INPUT N 20k FAULT Rated Decoupling Applicable Current Capacitor Types (Amps) 600V Modules PM30RSF060 30 0.3 F PM50RSK060 55 0.47 F PM50RSA060 50 0.47 F PM75RSA060, 75 1.0 F PM75RSK060, PM75RVA060 PM100RSA060 100 1.0 F PM150RSA060 150 1.5 F PM200RSA060 200 2.0 F 1200V Modules PM10RSH120 10 0.1 F PM15RSH120 15 0.1 F PM25RSB120 ...
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... P V VP1 V WPC WP1 20k 20k MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES FAULT 10 F INPUT 20k 0 FAULT OUTPUT SAME AS INPUT U INTERFACE P CIRCUIT FAULT OUTPUT SAME AS INPUT U INTERFACE P CIRCUIT 15 V ...
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... F PM150DSA120 150 47 F PM200DSA120, 200 68 F PM200DVA120 PM300DSA120, 300 68 F PM300DVA120 *Depending on maximum DC link voltage and main circuit layout, an RCDi clamp may be needed. (see Section 3.3) MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES 6. 0 ...
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... Capacitor Capacitor Capacitor Types (Amps 600V Modules PM800HSA060 800 68 F 1200V Modules PM400HSA120 400 68 F PM600HSA120 600 68 F PM800HSA120 800 68 F MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES + 15V + 15 V IPM IPM ...
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... Figure 6.43 Interface Circuit for PM10CZF120 and PM15CZF120 – 10k 5V MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES V UP 20k + 10 – 0 UPC V VP 20k + 10 – 0 VPC V WP 20k + 10 – ...
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... IPM pin spacing E Header Receptacle Pin Spacing Table 6.7 Third Generation IPM Connection Methods Third Generation Intelligent Power Module Type PM10CSJ060, PM15CSJ060, PM20CSJ060, PM30CSJ060, PM30RSF060, PM50RSK060, PM10RSH120, PM15RSH120 PM50RSA060, PM75RSA060, PM100CSA060, PM100RSA060, PM150CSA060, PM150RSA060, Receptacle PM200CSA060, PM25RSB120, PM50RSA120, PM75CSA120, PM100CSA120 PM200DSA060, PM300DSA060, PM400DSA060, 5 Position 2.54mm (0.1") Inverse ...
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... V-Series Intelligent Power Module Type PM75RVA060, PM100CVA060, PM150CVA060, PM200CVA060, PM300CVA060, PM50RVA120, PM75CVA120, PM100CVA120, PM150CVA120 PM400DVA060, PM600DVA060, PM200DVA120, PM300DVA120 MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES optocouplers with narrow distribu- tion of switching times the required type B dead time could be reduced. ...
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... Thermal design and power loss estimation is covered in Section 3.4. Mitsubishi offers a complete line-up of diode modules that are ideal for use as the input bridge in inverter applications. MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Figure 6.46 IPM Inverter System 3-PHASE INPUT A C – ...
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... Inductive surge voltages can exceed de- vice ratings. Figure 6.48 Mounting Screws Torque Order 2 MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING INTELLIGENT POWER MODULES Mechanical Considerations: I. Avoid mechanical shock. The module uses ceramic isolation that can be cracked if the mod- ule is dropped ...