MBM200GR HITACHI, MBM200GR Datasheet - Page 2

• Manufacturer Part Number: MBM200GR
• Manufacturer: HITACHI

Collector to Emitter voltage vs. Gate to Emitter voltage
400
300
200
100
10
20
15
10
0
8
6
4
2
0
5
0
Collector current vs. Collector to Emitter voltage
0
0
0
Tc
Vcc
Ic
Tc
Tc
=
VGE
=
=
25
=
200A
=
25
25
600V
°
°
Collector to Emitter Voltage, V
C
=
°
C
400
15V14V13V12V
C
Gate to Emitter Voltage, V
2
Gate charge characteristics
5
Gate Charge, Q
800
4
10
1200
6
Pc
G
=
(nC)
1250W
GE
15
CE
1600
(V)
Ic
Ic
8
TYPICAL
(V)
TYPICAL
=
=
TYPICAL
400A
200A
2000
10
20
11V
10V
9V
Collector to Emitter voltage vs. Gate to Emitter voltage
400
300
200
100
400
300
200
100
10
8
6
4
2
0
0
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc
Tc
Tc
Tc
GE
=
=
=
=
=
125
25
125
Forward voltage of free-wheeling diode
125
0V
VGE
°
Collector to Emitter Voltage, V
C
°
°
°
Gate to Emitter Voltage, V
C
C
C
1
2
=
5
15V14V13V12V
Forward Voltage, V
2
4
10
3
6
F
GE
15
(V)
(V)
CE
Ic
Ic
4
8
TYPICAL
TYPICAL
=
=
TYPICAL
PDE-M200GR12A-0
(V)
400A
200A
20
10
5
11V
10V
9V