HM538123BJ-7 HITACHI, HM538123BJ-7 Datasheet

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HM538123BJ-7

Manufacturer Part Number
HM538123BJ-7
Description
Manufacturer
HITACHI
Datasheet

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Part Number:
HM538123BJ-7
Manufacturer:
HITACHI/日立
Quantity:
20 000
Description
The HM538123B is a 1-Mbit multiport video RAM equipped with a 128-kword
256-word
asynchronously. It can transfer data between RAM and SAM. In addition, it has two modes to realize fast
writing in RAM. Block write and flash write modes clear the data of 4-word
(256-word
possible by dividing SAM into two split buffers equipped with 128-word
transfer data to SAM which is not active, and enables a continuous serial access.
Features
Multiport organization
Asynchronous and simultaneous operation of RAM and SAM capability
Access time
Cycle time
Low power
High-speed page mode capability
Mask write mode capability
Bidirectional data transfer cycle between RAM and SAM capability
Split transfer cycle capability
Block write mode capability
Flash write mode capability
RAM: 128-kword
SAM: 256-word
RAM: 60 ns/70 ns/80 ns/100 ns max
SAM: 20 ns/22 ns/25 ns/25 ns max
RAM: 125 ns/135 ns/150 ns/180 ns min
SAM: 25 ns/25 ns/30 ns/30 ns min
Active
Standby 38.5 mW max
8-bit) respectively in one cycle of RAM. And the HM538123B makes split transfer cycle
8-bit SAM (serial access memory).
RAM: 413 mW max
SAM: 275 mW max
8-bit
1 M VRAM (128-kword
8-bit and
HM538123B Series
Its RAM and SAM operate independently and
8-bit)
8-bit and the data of one row
8-bit each. This cycle can
8-bit dynamic RAM and a
ADE-203-231D (Z)
Nov. 1997
Rev. 4.0

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HM538123BJ-7 Summary of contents

Page 1

HM538123B Series 1 M VRAM (128-kword Description The HM538123B is a 1-Mbit multiport video RAM equipped with a 128-kword 256-word 8-bit SAM (serial access memory). asynchronously. It can transfer data between RAM and SAM. In addition, it has two modes ...

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... HM538123B Series 3 variations of refresh (8 ms/512 cycles) -only refresh 5$6 -before- refresh &$6 5$6 Hidden refresh TTL compatible Ordering Information Type No. Access Time HM538123BJ HM538123BJ HM538123BJ HM538123BJ-10 100 ns 2 Package 400-mil 40-pin plastic SOJ (CP-40D) ...

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... Column address strobe &$6 Write enable :( / Data transfer/Output enable ' Serial clock SAM port enable 6( DSF Special function input flag QSF Special function output flag V Power supply CC V Ground connection HM538123BJ Series SI/ SI/O0 SI/ SI/O1 SI/ SI/O2 SI/ SI/ ...

Page 4

HM538123B Series Block Diagram A0 – A7 Column Address Buffer Input Data Control Input Buffer I/O0 – I/ – – A8 Row Address Refresh Buffer Counter Row Decoder 0 255 511 Memory Array 0 Serial Output ...

Page 5

Pin Functions 5$6 5$6 (input pin basic RAM signal active in low level and standby in high level. Row 5$6 address and signals as shown in table 1 are input at the falling edge of determine ...

Page 6

HM538123B Series I/O0 – I/O7 (input/output pins): I/O pins function as mask data at the falling edge of mode). Data is written only to high I/O pins. Data on low I/O pins are masked and internal data are retained. After ...

Page 7

Operation of HM538123B RAM Read Cycle ( / high &$6 edge of ) &$6 Row address is entered at the falling edge and column address at the 5$6 in standard DRAM. Then, when :( outputs through I/O pin. ...

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HM538123B Series High-Speed Page Mode Cycle ( / '7 High-speed page mode cycle reads/writes the data of the same row address at high speed by toggling while is low. Its cycle time is one third of the random read/write cycle. ...

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Color Register Set Cycle RAS CAS Address Row WE DT/OE DSF Color Data I/O Set color register Block Write Cycle ( high, &$6 '7 falling edge of ) &$ block write cycle, 4 columns of data (4-word data ...

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HM538123B Series Color Register Set Cycle RAS CAS Row Address WE DT/OE DSF I/O Color Data *1 I/O WE I/O Mask Data Low High Don't care I/O Mask Data Low: Mask High: Non Mask Address Mask Data Column0 (A0 = ...

Page 11

Read Transfer Cycle ( high, &$6 '7 This cycle becomes read transfer cycle by driving . The row address data (256 5$6 synchronously at the rising edge of from SAM start address determined by column address. In read transfer cycle, ...

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HM538123B Series Write Transfer Cycle ( high, &$6 '7 Write transfer cycle can transfer a row of data input by serial write cycle to RAM. The row address of data transferred into RAM is determined by the address at the ...

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A8 A0 000000000 011111111 100000000 111111111 (Read transfer cycle) Figure 4 Example of Row Bit Data Transfer Memory Array AX8 = 0 Figure 5 Block Diagram for Split Transfer Split Write Transfer Cycle ( high, &$6 ...

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HM538123B Series RAS t (min) STS CAS Address DT/OE DSF 255 SC (127) Figure 6 Limitation in Split Transfer SAM Port Operation Serial Read Cycle SAM port is in read mode when the previous data transfer cycle is read transfer ...

Page 15

Refresh RAM Refresh RAM, which is composed of dynamic circuits, requires refresh to retain data. Refresh is executed by accessing all 512 row addresses within 8 ms. There are three refresh cycles: (1) -before- (CBR) refresh cycle, and (3) Hidden ...

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HM538123B Series Recommended DC Operating Conditions ( +70°C) Parameter Symbol *1 Supply voltage Input high voltage Input low voltage V IL Notes: 1. All voltages referred –3.0 ...

Page 17

DC Characteristics ( +70°C, V HM538123B -6 Parameter Symbol Min Max Min Max Min Max Min Max Unit RAM Port -before- I — 50 &$6 CC5 refresh 5$6 current I — 100 — CC11 Data transfer I ...

Page 18

HM538123B Series AC Characteristics ( +70°C, V Test Conditions Input rise and fall time : 5 ns Output load : See figures Input pulse levels 3 Input timing reference levels : 0.8 V, ...

Page 19

Common Parameter Parameter Symbol Min Max Random read or write cycle t RC time precharge time t 5$6 RP pulse width t 5$6 RAS pulse width t &$6 CAS Row address setup time t ASR Row address hold time t ...

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HM538123B Series Read Cycle (RAM), Page Mode Read Cycle Parameter Symbol Min Max Access time from t 5$6 RAC Access time from t &$6 CAC Access time from t 2( OAC Address access time t AA Read command setup time ...

Page 21

Write Cycle (RAM), Page Mode Write Cycle, Color Register Set Cycle Parameter Symbol Min Max Write command setup time t WCS Write command hold time t WCH Write command pulse width t WP Write command to lead t 5$6 RWL ...

Page 22

HM538123B Series Read-Modify-Write Cycle Parameter Symbol Min Max Read-modify-write cycle time t RWC pulse width (read-modify- t 5$6 RWS write cycle) to delay time t &$6 :( CWD Column address to delay t :( AWD time to data-in delay time ...

Page 23

Flash Write Cycle, Block Write Cycle Parameter Symbol Min Max to data-in delay time t &$6 CDD to data-in delay time t 2( ODD Read Transfer Cycle Parameter Symbol hold time referenced #$ RDH hold time referenced ...

Page 24

HM538123B Series Read Transfer Cycle (cont) Parameter Symbol Min Max SC pulse width precharge time t SCP SC access time t SCA Serial data-out hold time t SOH Serial data-in setup time t SIS Serial data-in hold ...

Page 25

Pseudo Transfer Cycle, Write Transfer Cycle Parameter Symbol Min Max setup time referred 5$6 ES hold time referred 5 setup time referred to t 5$6 SRS to SC delay time t 5$6 ...

Page 26

HM538123B Series Split Read Transfer Cycle, Split Write Transfer Cycle Parameter Symbol Min Max Split transfer setup time t STS Split transfer hold time t RST referenced to 5$6 Split transfer hold time t CST referenced to &$6 Split transfer ...

Page 27

Serial Read Cycle, Serial Write Cycle Parameter Symbol Min Max Serial clock cycle time t SCC SC pulse width precharge width t SCP Access time from SC t SCA Access time from t 6( SEA Serial data-out ...

Page 28

HM538123B Series 16. After power-up, pause for 100 µs or more and execute at least 8 initialization cycle (normal memory cycle or refresh cycle), then start operation. 17. After read transfer cycle, if split read transfer cycle is executed without ...

Page 29

Early Write Cycle RAS t CAS t t ASR RAH Address Row I/O (Output I/O Mask Data (Input DTS DTH DT/ FSR RFH DSF Note: 1. ...

Page 30

HM538123B Series Read-Modify-Write Cycle RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output I/O Mask Data (Input DTS DTH DT/ RFH ...

Page 31

Page Mode Write Cycle (Early Write) RAS t CSH t RCD CAS ASR RAH ASC Address Row Column WCS WE *1 I/O (Output I/O Mask Valid ...

Page 32

HM538123B Series 5$6 5$6 -Only Refresh Cycle RAS t CRP CAS t t ASR RAH Row Address t OFF1 I/O (Output) t CDD t I/O OFF2 (Input) t ODD t t DTH DTS DT/ FSR RFH DSF &$6 ...

Page 33

Hidden Refresh Cycle RAS t RCD CAS t RAD t t ASR t RAH t Address Row t RCS WE I/O (Output) t DZC I/O (Input) t DZO t t DTS DTH DT/ RFH FSR t FSC DSF ...

Page 34

HM538123B Series Color Register Set Cycle (Delayed Write) RAS CAS t t ASR RAH Address Row I/O (Output) I/O (Input) t DTS DT/ FSR RFH DSF Color Register Read Cycle RAS t CAS t t ...

Page 35

Flash Write Cycle RAS t CRP CAS Address WE t CDD t OFF1 I/O (Output) t OFF2 t ODD I/O (Input) t DTS DT/OE DSF Block Write Cycle RAS t CRP CAS Address WE t CDD t OFF1 I/O (Output) ...

Page 36

HM538123B Series Page Mode Block Write Cycle RAS t CSH t RCD CAS t t ASR t RAH ASC Column Row Address A2- I/O (Output I/O I/O Address ...

Page 37

Read Transfer Cycle (1) RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output) t DTS DT/ FSR RFH DSF t SCC SC t SCA t SOH Valid Sout ...

Page 38

HM538123B Series Read Transfer Cycle (2) RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output DTS DTH DT/ FSR RFH DSF t SRS ...

Page 39

Pseudo Transfer Cycle RAS t RCD CAS t t ASR RAH Address Row I/O (Output DTS DTH DT/ FSR RFH DSF t SEZ SRS t ...

Page 40

HM538123B Series Write Transfer Cycle RAS t RCD CAS t t ASR RAH Address Row I/O (Output) t DTS t DTH DT/ FSR RFH DSF SRS t ...

Page 41

Split Read Transfer Cycle RAS t CRP CAS t ASR Address Row OFF1 I/O (Output) t DTS DT/OE t FSR DSF Low SE t STS n SC 511 (n+255) (255) t SCA t SOH SI/O (Output) ...

Page 42

HM538123B Series Split Write Transfer Cycle RAS CAS t ASR Address Row OFF1 I/O (Output) t DTS DT/OE t FSR DSF Low SE t STS n SC 511 (n+255) (255) SI/O (Output SIS SIH ...

Page 43

Serial Read Cycle SE t SCC SCP SC t SCA t SOH SI/O Valid Sout Valid Sout (Output) Serial Write Cycle t SWH SE t SCC SIS SIH SI/O Valid Sin (Input) ...

Page 44

... HM538123B Series Package Dimensions HM538123BJ Series (CP-40D) 25.80 26.16 Max 40 1 0.74 1.30 Max 1.27 0.43 0.10 0.41 0.08 0.10 Dimension including the plating thickness Base material dimension 9.40 0.25 Hitachi Code CP-40D JEDEC — EIAJ Conforms Weight (reference value) 1.73 g Unit: mm ...

Page 45

... All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. ...

Page 46

HM538123B Series Revision Record Rev. Date Contents of Modification 1 Mar.18, 1994 Initial issue 2.0 Dec.8, 1994 Addition of figure 4: Example of row bit data transfer Addition of description about figure 4 for write transfer cycle 3.0 Apr. 24, ...

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