CY7C1470V25-200ACES Cypress Semiconductor Corporation., CY7C1470V25-200ACES Datasheet

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CY7C1470V25-200ACES

Manufacturer Part Number
CY7C1470V25-200ACES
Description
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05290 Rev. *E
Features
Logic Block Diagram-CY7C1470V25 (2M x 36)
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write capability
• Single 2.5V power supply
• 2.5V/1.8V I/O operation
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V25 and CY7C1472V25 available in lead-free
• Compatible with IEEE 1149.1 JTAG Boundary Scan
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
— Available speed grades are 250, 200, and 167 MHz
the need to use asynchronous OE
operation
— 3.0 ns (for 250-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
100 TQFP, and 165 fBGA packages. CY7C1474V25
available in 209-ball fBGA package.
CEN
CLK
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
b
a
c
d
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
WRITE REGISTRY
CONTROL LOGIC
3901 North First Street
WRITE ADDRESS
PRELIMINARY
ADV/LD
REGISTER 2
C
A1
A0
D1
D0
BURST
LOGIC
Q1
Q0
SRAM with NoBL™ Architecture
A0'
A1'
Functional Description
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL™) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with no wait states. The CY7C1470V25/
CY7C1472V25/CY7C1474V25
advanced (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data in systems that require frequent Write/Read transitions.
The
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte Write Selects (BW
for CY7C1470V25 and BW
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
DRIVERS
WRITE
CY7C1470V25/CY7C1472V25/CY7C1474V25
REGISTER 1
MEMORY
ARRAY
INPUT
San Jose
E
N
A
M
S
E
S
E
P
S
a
–BW
E
,
CA 95134
REGISTER 0
a
INPUT
–BW
h
D
A
A
N
G
T
S
T
E
E
R
I
for CY7C1474V25, BW
Revised December 5, 2004
E
are
b
for CY7C1472V25) and a
O
U
U
U
T
P
T
B
F
F
E
R
S
E
CY7C1470V25
CY7C1472V25
CY7C1474V25
equipped
1
, CE
DQs
DQP
DQP
DQP
DQP
a
b
c
d
2
408-943-2600
, CE
3
with
) and an
a
–BW
are
the
d

Related parts for CY7C1470V25-200ACES

CY7C1470V25-200ACES Summary of contents

Page 1

... Clock Enable (CEN) pin to suspend operation • Synchronous self-timed writes • CY7C1470V25 and CY7C1472V25 available in lead-free 100 TQFP, and 165 fBGA packages. CY7C1474V25 available in 209-ball fBGA package. • Compatible with IEEE 1149.1 JTAG Boundary Scan • ...

Page 2

... DQs DQP DQP DQP DQP DQP DQP f DQP g DQP h INPUT E E REGISTER 0 CY7C1470V25-167 CY7C1472V25-167 CY7C1474V25-167 3.0 3.4 450 400 120 120 Page Unit ...

Page 3

... DQb 23 58 DQa DQPb 24 57 DQa DDQ 27 54 DDQ DQa DQa DQPa CY7C1470V25 CY7C1472V25 CY7C1474V25 DDQ DQPa 74 DQa 73 DQa DDQ DQa 69 DQa ...

Page 4

... V b DDQ DDQ DDQ N DQP DDQ MODE A Document #: 38-05290 Rev. *E PRELIMINARY 165-Ball fBGA Pinout CY7C1470V25 (2M × 36 CEN CLK ...

Page 5

... TDI Pin Description controls DQ a and DQP , BW controls and DQP BW controls DQ and DQP CY7C1470V25 CY7C1472V25 CY7C1474V25 DQb DQb 3 BWS BWS DQb DQb b f BWS BWS DQb DQb DQb ...

Page 6

... The outputs are controlled DQP controlled DQP is controlled DQP is controlled CY7C1470V25 CY7C1472V25 CY7C1474V25 . During [71:0] is controlled DQP is controlled DQP is controlled left SS Page ...

Page 7

... LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables CY7C1470V25 CY7C1472V25 CY7C1474V25 /DQP for CY7C1474V25, a,b,c,d,e,f,g,h for CY7C1470V25 and DQ /DQP a,b,c,d a,b /DQP for CY7C1474V25, a,b,c,d,e,f,g,h for CY7C1470V25 & DQ /DQP ...

Page 8

... WE inputs are ignored and the burst counter is incremented. The correct BW (BW CY7C1474V25, BW for CY7C1470V25 and BW a,b,c,d CY7C1472V25) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “ ...

Page 9

... Truth Table (continued) Operation Write Abort (Continue Burst) Ignore Clock Edge (Stall) Sleep Mode Partial Write Cycle Description Function (CY7C1470V25) Read Write – No bytes written Write Byte a – (DQ and DQP ) a a Write Byte b – (DQ and DQP ) b b Write Bytes b, a Write Byte c – ...

Page 10

... TAPs. The TAP operates using JEDEC-standard 2.5V or 1.8V I/O logic levels. The CY7C1470V25/CY7C1472V25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature ...

Page 11

... TAP controller’s capture set-up plus hold time (t plus portion of The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue still CY7C1470V25 CY7C1472V25 CY7C1474V25 Unlike the SAMPLE/PRELOAD Page ...

Page 12

... Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH DON’T CARE UNDEFINED [9, 10] Over the Operating Range Description / ns CY7C1470V25 CY7C1472V25 CY7C1474V25 TDOV t TDOX Min. Max ...

Page 13

... DDQ V = 1.8V DDQ V = 2.5V DDQ V = 1.8V DDQ GND ≤ V ≤ DDQ CY7C1472V25 CY7C1474V25 (2M x 36) (4M x 18) 000 000 01011 01011 001000 001000 100100 010100 00000110100 00000110100 00000110100 1 1 CY7C1470V25 CY7C1472V25 CY7C1474V25 DDQ 0.9V 50Ω 50Ω 20pF O Min. Max. 1.7 2.1 1.6 0.4 0.2 0.2 1 0 0.3 DD –0.3 0.7 –0.3 0.36 –5 5 ...

Page 14

... Description Boundary Scan Exit Order (x36) Bit # 165-Ball CY7C1470V25 CY7C1472V25 CY7C1474V25 Bit Size (x72 – – 110 (continued P11 P10 R9 R10 R11 ...

Page 15

... CY7C1470V25 CY7C1472V25 CY7C1474V25 (continued) 165-Ball P11 P10 R9 R10 R11 M10 L10 K10 J10 H11 G11 F11 E11 D11 C11 ...

Page 16

... CY7C1470V25 CY7C1472V25 CY7C1474V25 (continued) 209-Ball W11 55 W10 56 V11 57 V10 58 U11 59 U10 60 T11 61 ...

Page 17

... Document #: 38-05290 Rev. *E PRELIMINARY (continued) 209-Ball ID A11 A10 CY7C1470V25 CY7C1472V25 CY7C1474V25 Page ...

Page 18

... V ≤ /2), undershoot: V (AC)> –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < CY7C1470V25 CY7C1472V25 CY7C1474V25 Ambient Temperature DDQ 0°C to +70°C 2.5V–5%/+5% 1. Min. Max. 2.375 2.625 2.375 ...

Page 19

... R = 1667Ω 2.5V V DDQ OUTPUT GND 1538Ω INCLUDING JIG AND (b) SCOPE R = 14KΩ 1.8V V DDQ OUTPUT 0 14KΩ INCLUDING JIG AND (b) SCOPE CY7C1470V25 CY7C1472V25 CY7C1474V25 TQFP 209-BGA 165-fBGA Max. Max. Max 165 fBGA ...

Page 20

... DDQ is the time power needs to be supplied above V is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ CY7C1470V25 CY7C1472V25 CY7C1474V25 -200 -167 Min. Max. Min. Max 5.0 6.0 200 167 2.0 2.2 2.0 2.2 3.0 3.4 3.0 3.4 1.3 1 ...

Page 21

... CLZ D(A1) D(A2) D(A2+1) Q(A3) BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH,CE is HIGH CY7C1470V25 CY7C1472V25 CY7C1474V25 DOH OEV CHZ Q(A4) Q(A4+1) D(A5) t OEHZ t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) is LOW HIGH ...

Page 22

... I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05290 Rev. *E PRELIMINARY D(A1) Q(A2) Q(A3) STALL READ WRITE STALL Q(A3) D(A4) DON’T CARE DDZZ High-Z DON’T CARE CY7C1470V25 CY7C1472V25 CY7C1474V25 CHZ D(A4) Q(A5) NOP READ DESELECT CONTINUE Q(A5) DESELECT UNDEFINED t ZZREC t RZZI DESELECT or READ Only Page ...

Page 23

... CY7C1470V25-200AXC CY7C1472V25-200AXC CY7C1470V25-200BZC CY7C1472V25-200BZC CY7C1474V25-200BGC CY7C1470V25-200BZXC CY7C1472V25-200BZXC CY7C1474V25-200BGXC 167 CY7C1470V25-167AXC CY7C1472V25-167AXC CY7C1470V25-167BZC CY7C1472V25-167BZC CY7C1474V25-167BGC CY7C1470V25-167BZXC CY7C1472V25-167BZXC CY7C1474V25-167BGXC Shaded area contains advance information Please contact your local Cypress sales representative for availability of these parts. Lead-free BG packages (Ordering Code: BGX) will be available in 2005. ...

Page 24

... Package Diagrams 100-pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05290 Rev. *E PRELIMINARY CY7C1470V25 CY7C1472V25 CY7C1474V25 51-85050-*A Page ...

Page 25

... SEATING PLANE C Document #: 38-05290 Rev. *E PRELIMINARY 165-Ball FBGA ( 1.40 mm) BB165C CY7C1470V25 CY7C1472V25 CY7C1474V25 PIN 1 CORNER BOTTOM VIEW Ø0. Ø0. Ø0.45±0.05(165X 1.00 5.00 10.00 B 15.00±0.10 ...

Page 26

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. PRELIMINARY 209-Ball FBGA ( 1.76 mm) BB209A CY7C1470V25 CY7C1472V25 CY7C1474V25 51-85167-** ...

Page 27

... Document History Page Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05290 Orig. of REV. ECN No. Issue Date Change ** 114677 08/06/02 *A 121519 01/27/03 *B 223721 See ECN *C 235012 See ECN *D 243572 See ECN *E 299511 See ECN Document #: 38-05290 Rev. *E ...

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