APT10050B2VR Advanced Power Technology, APT10050B2VR Datasheet - Page 4

• Manufacturer Part Number: APT10050B2VR
• Manufacturer: Advanced Power Technology

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
I
T C =+25 C
T J =+150 C
SINGLE PULSE
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
LIMITED BY R DS (ON)
D
OPERATION HERE
Q
[Cont.]
100
g
, TOTAL GATE CHARGE (nC)
5
10
200
V DS =200V
50 100
V DS =100V
300
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
V DS =500V
400
Dimensions in Millimeters and (Inches)
500 1000
T-MAX™ Package Outline
500
5,256,583
10 S
100 S
1mS
10mS
100mS
DC
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
5,045,903
4,748,103
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
5.45 (.215) BSC
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
5,089,434
5,283,202
2-Plcs.
30,000
10,000
5,000
1,000
500
100
100
50
10
5
1
5,182,234
5,231,474
.01
V
V
0
DS
SD
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
15.49 (.610)
16.26 (.640)
T J =+150 C
0.4
5,019,522
5,434,095
.1
0.8
5,262,336
5,528,058
APT10050B2VR
T J =+25 C
1
1.2
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
1.6
C iss
C oss
C rss
10
2.0
50