QM30TB-2H MITSUBISHI, QM30TB-2H Datasheet
QM30TB-2H
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QM30TB-2H Summary of contents
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... BuP EuP BvP EvP BwP EwP BuN EuN BvN EvN BwN EwN 98 110 Tab#110, t=0.5 Tab#250, t=0.8 LABEL MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE • I Collector current .......................... 30A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................... 75 FE • Insulated Type • ...
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... =600V, I =30A, I =–I =0. Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 310 2 300 –40~+150 –40~+125 2500 1 ...
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... –1 10 2.8 3.2 3.6 ( =30A – (A) B MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0 COLLECTOR-EMITTER REVERSE VOLTAGE QM30TB-2H INSULATED TYPE I =–1A B2 800 1000 1200 1400 1600 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...
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... – FORWARD CURRENT QM30TB-2H INSULATED TYPE =25° =125° =600V CC I =–I =0. – ...