QM75DY-2H MITSUBISHI, QM75DY-2H Datasheet - Page 4
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QM75DY-2H
Manufacturer Part Number
QM75DY-2H
Description
Manufacturer
MITSUBISHI
Datasheet
1.QM75DY-2H.pdf
(5 pages)
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0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
10
10
10
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
2
1
0
7
5
3
2
5
3
2
7
5
3
2
0
7
10
3
2
1
0
0
COLLECTOR-EMITTER VOLTAGE V
10
10
–1
TRANSIENT THERMAL IMPEDANCE
T
–3
NON-REPETITIVE
0
BASE REVERSE CURRENT –I
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
4
4
4
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
1
–2
t
TIME (s)
s
2
2
2
10
3
3
3
4
4
0
t
5
5
f
7
7
V
I
I
B1
C
2 3 4 5 7
10
10
CC
=75A
=1.5A
=600V
–1
2
t
100µ
T
T
w
2
2
j
j
=50µ
=25°C
=125°C
3
3
B2
S
4
4
5
5
(A)
CE
S
7
7
10
(V)
10
10
1
0
3
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
200
T
T
COLLECTOR
DISSIPATION
0.4
j
j
=25°C
=125°C
40
HIGH POWER SWITCHING USE
60
400
0.8
–V
CEO
80 100 120 140
I
B2
600
1.2
(V)
=–4A
SECOND
BREAKDOWN
AREA
QM75DY-2H
800
C
1.6
INSULATED TYPE
( C)
I
B2
=–2A
CE
1000
160
2.0
(V)
Feb.1999