MG200J6ES60 MITSUBISHI, MG200J6ES60 Datasheet
MG200J6ES60
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MG200J6ES60 Summary of contents
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... The electrodes are isolated from case. • Low thermal resistance • V =2.0 V (typ.) CE (sat) Equivalent Circuit P CN-1:7 CN-1:6 CN-1:4 CN-1:8 CN-1:5 CN-1:3 CN-2:3 CN-2:2 C N-2:4 N Signal Terminal ( (Y) 3. MITSUBISHI IGBT Module CN-1:2 CN-1 CN-2 (V) TH1 8. TH2 G ( (L) 1 MG200J6ES61 2005-04-01 ...
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Package Dimensions ( (U) 7. TH1 G ( (Y) 3. ...
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Maximum Ratings Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Module Isolation voltage Screw torque Electrical Characteristics (T 1. Inverter stage Characteristics Gate ...
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Switching Time Test Circuit & Timing Chart R G − Recommneded conditions for application Characteristics P-N power terminal supply voltage Gate voltage Switching frequency 10% t ...