QM100HY-2H MITSUBISHI, QM100HY-2H Datasheet - Page 4

• Manufacturer Part Number: QM100HY-2H
• Manufacturer: MITSUBISHI

0.25
0.15
0.05
10
10
10
10
10
10
10
0.2
0.1
10
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
0
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
T
BASE REVERSE CURRENT –I
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2 3 45 7
2
=25°C
SWITCHING TIME VS. BASE
3
2 3 4 5 7
3
4
4
5
5
CURRENT (TYPICAL)
7
7
10
10
10
1
–2
1
TIME (s)
t
2 3 4 5 7
2
2
f
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
V
I
I
–1
2
B1
C
t
100µ
CC
=100A
T
T
w
2
2
=2A
t
=600V
j
j
=50µ
=25°C
=125°C
s
3
3
B2
4
4
S
(A)
5
5
CE
S
7
7
10
(V)
10
10
1
0
3
200
175
150
125
100
100
10
10
10
10
75
50
25
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
20
=125°C
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
MEDIUM POWER SWITCHING USE
200
0.4
40
60
400
0.8
–V
CEO
80 100 120 140
600
(V)
1.2
I
B2
SECOND
BREAKDOWN
AREA
QM100HY-2H
=–5A
T
T
800
C
1.6
j
j
=25°C
=125°C
INSULATED TYPE
( C)
I
B2
CE
=–2A
1000
160
2.0
(V)
Feb.1999