MSM51V18165F-60TS-K Oki Semiconductor, MSM51V18165F-60TS-K Datasheet

no-image

MSM51V18165F-60TS-K

Manufacturer Part Number
MSM51V18165F-60TS-K
Description
1,048,576-word x 16-bit dynamic RAM
Manufacturer
Oki Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MSM51V18165F-60TS-K
Manufacturer:
OKI
Quantity:
5 530
Part Number:
MSM51V18165F-60TS-K
Manufacturer:
OKI
Quantity:
6 250
Part Number:
MSM51V18165F-60TS-K
Manufacturer:
OKI
Quantity:
662
MSM51V18165F
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V18165F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM51V18165F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
·
·
·
·
·
·
·
·
·
PRODUCT FAMILY
MSM51V18165F
1,048,576-word ´ 16-bit configuration
Single 3.3V power supply, ±0.3V tolerance
Input
Output
Refresh
Fast page mode with EDO, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
CAS before RAS self-refresh capability
Package options:
50/44-pin 400mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM51V18165F-xxTS-K)
42-pin 400mil plastic SOJ
Family
: LVTTL compatible, low input capacitance
: LVTTL compatible, 3-state
: 1024 cycles/16ms
Semiconductor
50ns
60ns
70ns
t
RAC
Access Time (Max.)
25ns
30ns
35ns
t
AA
(SOJ42-P-400-1.27)
(TSOPII50/44-P-400-0.80-L)
13ns
15ns
20ns
t
CAC
13ns
15ns
20ns
t
OEA
Cycle Time
(Min.)
104ns
124ns
84ns
No.
(Product : MSM51V18165F-xxTS-L)
(Product : MSM51V18165F-xxJS)
Operating (Max.) Standby (Max.)
324mW
288mW
252mW
xx indicates speed rank.
Power Dissipation
This version:Oct.1999
1.8mW
1/14

Related parts for MSM51V18165F-60TS-K

MSM51V18165F-60TS-K Summary of contents

Page 1

... DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V18165F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP ...

Page 2

PIN CONFIGRATION (TOP VIEW DQ1 2 41 DQ16 DQ2 3 40 DQ15 DQ3 4 39 DQ14 DQ4 5 38 DQ13 DQ5 7 36 DQ12 DQ6 8 35 DQ11 DQ7 9 ...

Page 3

BLOCK DIAGRAM Timing RAS Generator LCAS UCAS Column 10 Address Buffers Internal A0-A9 Address Control Clock Counter Row Row 10 10 Address Deco- Buffers ders Chip V Generator BB On Chip IV Generator FUNCTION ...

Page 4

ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to V Voltage V Supply relative Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage ...

Page 5

DC Characteristics Parameter Symbol V Output High Voltage Output Low Voltage £ V Input Leakage I LI All other pins not Current under test = 0V DQ disable Output Leakage I LO ...

Page 6

AC Characteristic (1/2) Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column ...

Page 7

AC Characteristic (2/2) Parameter OE Hold Time from CAS (DQ Disable) RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address ...

Page 8

Notes start-up delay of 200ms is required after power-up, followed by a minimum of eight initialization cycles(RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume (Min.) ...

Page 9

Timing Chart x Read Cycle V IH RAS CRP V IH CAS ASR V IH Address Row Open ...

Page 10

Read Modify Write Cycle V IH RAS CRP V IH CAS ASR RAH V IH Address Row I/OH DQ ...

Page 11

Fast Page Mode Read Cycle (Part- RAS CRP V IH CAS t V RAD IL t ASR Address Row RCS ...

Page 12

Fast Page Mode Write Cycle (Early Write RAS CRP V IH CAS t V RAD IL t ASR Address Row ...

Page 13

RAS-Only Refresh Cycle V IH RAS CRP V IH CAS ASR V IH Address Row CEZ CAS before RAS Refresh Cycle ...

Page 14

Hidden Refresh Read Cycle V IH RAS CRP V IH CAS RAH t ASR V IH Address Row ...

Page 15

NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date. 2. The outline of action and examples for application ...

Related keywords