MSM514800E-70JS Oki Semiconductor, MSM514800E-70JS Datasheet

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MSM514800E-70JS

Manufacturer Part Number
MSM514800E-70JS
Description
MSM514800E-70JS524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
Manufacturer
Oki Semiconductor
Datasheet

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1
MSM514800E/ESL
524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514800E/ESL is a 524,288-word
technology. The MSM514800E/ESL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS
process. The MSM514800E/ESL is available in a 28-pin plastic SOJ. The MSM514800ESL (the self-refresh and
lower-power version) is specially designed for lower-power applications.
FEATURES
PRODUCT FAMILY
FEDD514800ESL-01
MSM514800E/ESL
28-pin 400mil plastic SOJ
524,288-word
Single 5V power supply, 10% tolerance
Input
Output
Refresh
Fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
CAS before RAS self-refresh capability (SL version)
Package options:
Family
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 1,024 cycles/16 ms, 1,024 cycles/128 ms (SL Version)
8-bit configuration
Semiconductor
60ns
70ns
t
RAC
Access Time (Max.)
30ns
35ns
t
AA
(SOJ28-P-400-1.27)
15ns
20ns
t
CAC
8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
15ns
20ns
t
OEA
Cycle Time
(Min.)
110ns
130ns
(Product : MSM514800E/ESL-xxJS)
Operating (Max.)
550mW
495mW
xx : indicates speed rank.
Power Dissipation
This version : Dec. 2000
1.1mW (SL Version)
Standby (Max.)
5.5mW/
1/14

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MSM514800E-70JS Summary of contents

Page 1

... The MSM514800E/ESL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514800E/ESL is available in a 28-pin plastic SOJ. The MSM514800ESL (the self-refresh and lower-power version) is specially designed for lower-power applications. ...

Page 2

... Address Input RAS Row Address Strobe CAS Column Address Strobe Data Input/Data Output OE Output Enable WE Write Enable V Power Supply (5V Ground (0V Connection FEDD514800ESL-01 MSM514800E/ESL V SS DQ8 DQ7 DQ6 DQ5 CAS pin, and the same CC pin. ...

Page 3

... Buffers A9R This Version: Dec.2000 9 Column Decoders Sense Amplifiers Refresh Control Clock Row 10 Deco- Word Memory ders Drivers Cells On Chip V Generator BB FEDD514800ESL-01 MSM514800E/ESL Timing Generator WE Write Clock OE Generator Output 8 8 Buffers I Selector Input 8 8 Buffers DQ1 – DQ8 3/14 ...

Page 4

... CC is applied). CC 2.0V when the pulse width is less than 20ns (the pulse width is with SS is applied). SS Symbol C IN1 C IN2 C I/O FEDD514800ESL-01 MSM514800E/ESL Rating 0 0.5 CC 0 150 (Ta = 0°C to 70°C) Typ. Max. 5.0 5.5 0 ...

Page 5

... RAS = CAS cycling Min 125 s, RC CAS before RAS RAS RAS 0.2V, CAS 0.2V for output open condition. CC 6.5V, 1.0V V 0.2V. IL FEDD514800ESL-01 MSM514800E/ESL ( ± 10 0°C to 70°C) CC MSM514800 E/ESL-70 Unit Max. Min. Max 0 ...

Page 6

... ROH 10,000 CAS t 60 CSH t 5 CRP t 35 RHCP RCD RAD t 0 ASR t 10 ASR FEDD514800ESL-01 MSM514800E/ESL MSM514800 E/ESL-70 Unit Note Min. Max. 130 ns 185 100 4 ...

Page 7

... OED t 40 CWD t 55 AWD t 85 RWD t 60 CPWD t 5 RPC t 10 CSR t 10 CHR t 100 RASS t 110 RPS t 40 CHS FEDD514800ESL-01 MSM514800E/ESL MSM514800 E/ESL-70 Unit Note Min. Max ...

Page 8

... They are included in AWD CPWD t (Min.), t RWD RWD AWD FEDD514800ESL-01 MSM514800E/ESL (Max.) can be met. RAC is greater than the specified t RCD (Max.) can be met. RAC is greater than the specified t RAD t (Min.), then the cycle is an early ...

Page 9

... RCD RSH t CAS t RAD t RAL RAH ASC CAH Column t CWL t WCS t WCH Valid Data-in FEDD514800ESL-01 MSM514800E/ESL CRP t RRH t RCH t ROH t OFF t OEZ Valid Data-out CRP t RWL Open “H” or “L” “H” or “L” 9/14 ...

Page 10

... RAS t CSH t t RCD RSH t CAS t RAD t ASC RAH t CAH Column t t RCS CWD t RWD OEA t CAC t RAC t CLZ Valid Data-out FEDD514800ESL-01 MSM514800E/ESL CWL t RWL AWD t OEH t OED OEZ DS Valid Data-in t CRP “H” or “L” 10/14 ...

Page 11

... ASC ASC CAH RAH Column Column t CWL t WCH t t WCS WCS Valid Valid Data-in Data-in FEDD514800ESL-01 MSM514800E/ESL t RHCP RSH t t CAS CAS t RAL t CAH t t ASC CAH Column RCS RCH RCS OEA ...

Page 12

... OEA t OED CAC OEZ CAC Out In Out t CLZ Note: Out = Valid Data-out Valid Data-in t RAS t RAH Row FEDD514800ESL-01 MSM514800E/ESL t t PRWC RSH CAS CAS t t CAH CAH t ASC t t RAL CWL Column t RCS t t CPWD ...

Page 13

... RCD RSH t RAD t t ASC CAH Column t t RCS CAC t RAL ROH t OEA t RAC t CLZ FEDD514800ESL-01 MSM514800E/ESL RPC Open RAS CHR t RRH t OFF t OEZ Valid Data-out “H” or “L” “H” or “L” 13/14 ...

Page 14

... ASC CAH Column t t WCS WCH Valid Data-in t RASS t CSR t OFF Open Note: WE, OE, Address = “H” or “L” O FEDD514800ESL-01 MSM514800E/ESL RAS CHR t RPS t RPC t CHS “H” or “L” “H” or “L” 14/14 ...

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