SST39VF080-90-4C-EI Silicon Storage Technology, Inc, SST39VF080-90-4C-EI Datasheet

no-image

SST39VF080-90-4C-EI

Manufacturer Part Number
SST39VF080-90-4C-EI
Description
8 Mbit (x8) multi-purpose flash
Manufacturer
Silicon Storage Technology, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST39VF080-90-4C-EI
Manufacturer:
SST
Quantity:
3 500
Part Number:
SST39VF080-90-4C-EI
Manufacturer:
SST
Quantity:
20 000
Part Number:
SST39VF080-90-4C-EI
Manufacturer:
SST
Quantity:
19 768
Part Number:
SST39VF080-90-4C-EI
Manufacturer:
SST
Quantity:
17 741
FEATURES:
• Organized as 1M x8 / 2M x8
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption:
• Sector-Erase Capability
• Block-Erase Capability
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The SST39LF/VF080 and SST39LF/VF016 devices are
1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manu-
factured with SST’s proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and thick
oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The
SST39LF080/016 write (Program or Erase) with a 3.0-3.6V
power supply. The SST39VF080/016 write (Program or
Erase) with a 2.7-3.6V power supply. They conform to
JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/
VF080 and SST39LF/VF016 devices provide a typical
Byte-Program time of 14 µsec. The devices use Toggle Bit
or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39LF/VF080 and SST39LF/VF016 devices are
suited for applications that require convenient and econom-
ical updating of program, configuration, or data memory.
For all system applications, they significantly improve per-
formance and reliability, while lowering power consumption.
©2001 Silicon Storage Technology, Inc.
S71146-03-000 6/01
1
– 3.0-3.6V for SST39LF080/016
– 2.7-3.6V for SST39VF080/016
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 15 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
– Uniform 4 KByte sectors
– Uniform 64 KByte blocks
– 55 ns for SST39LF080/016
– 70 and 90 ns for SST39VF080/016
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016
8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories
396
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Erase and Byte-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
They inherently use less energy during Erase and Program
than alternative flash technologies. The total energy con-
sumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. They also improve flexibility while lower-
ing the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 and SST39LF/VF016 are offered in 40-
lead TSOP and 48-ball TFBGA packaging. See Figures 1
and 2 for pinouts.
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– Internal V
– Toggle Bit
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
15 seconds (typical) for SST39LF/VF080
30 seconds (typical) for SST39LF/VF016
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

Related parts for SST39VF080-90-4C-EI

SST39VF080-90-4C-EI Summary of contents

Page 1

... Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – for SST39LF080/016 – 70 and 90 ns for SST39VF080/016 • Latched Address and Data PRODUCT DESCRIPTION The SST39LF/VF080 and SST39LF/VF016 devices are CMOS Multi-Purpose Flash (MPF) manu- factured with SST’ ...

Page 2

... During the Program operation, the only valid reads ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 are Data# Polling and Toggle Bit. During the internal Pro- gram operation, the host is free to perform additional tasks. Any commands issued during the internal Program opera- tion are ignored ...

Page 3

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet The actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i ...

Page 4

... Address CE# OE# WE# ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Product Identification Mode Exit/ CFI Mode Exit and In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accom- plished by issuing the Software ID Exit command sequence, which returns the device to the Read operation ...

Page 5

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet SST39LF/VF160 SST39LF/VF080 A16 A16 A15 A15 A14 A14 A13 A13 A12 A12 A11 A11 WE# WE A18 A18 FIGURE ...

Page 6

... Write Inhibit Product Identification Software Mode can but no other value ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 -A address lines will select the block 3.0-3.6V for SST39LF080/016 2.7-3.6V for SST39VF080/016 for SST39LF/VF016 20 OE# WE# ...

Page 7

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE OFTWARE OMMAND Command 1st Bus Sequence Write Cycle 1 Addr Data Byte-Program 5555H AAH Sector-Erase 5555H AAH Block-Erase 5555H AAH Chip-Erase 5555H AAH 4,5 Software ID Entry 5555H AAH 4 CFI Query Entry ...

Page 8

... Maximum time out for buffer program 2 25H 01H Maximum time out for individual Sector/Block-Erase 2 26H 01H Maximum time out for Chip-Erase 2 1. 0030H for SST39LF080/016 and 0027H for SST39VF080/016 TABLE EVICE EOMETRY NFORMATION FOR Address Data Data ...

Page 9

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE EVICE EOMETRY NFORMATION FOR Address Data Data 27H 15H Device size = 2 28H 00H Flash Device Interface description; 0000H = x8-only asynchronous interface 29H 00H 2AH 00H Maximum number of byte in multi-byte write = 2 ...

Page 10

... Industrial -40°C to +85° ONDITIONS OF EST Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . C Output Load . . . . . . . . . . . . . . . . . . . . C See Figures 14 and 15 ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 V DD 3.0-3. 2.7-3.6V 2.7-3. for SST39LF080/016 L = 100 pF for SST39VF080/016 L 10 Data Sheet + 0 ...

Page 11

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet TABLE PERATING HARACTERISTICS V = 3.0-3.6V SST39LF080/016 FOR DD Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current Auto Low Power ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage ...

Page 12

... Block-Erase BE T Chip-Erase SCE 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 ARAMETERS 2.7-3.6V AND FOR SST39LF080/016-55 SST39VF080/016-70 Min Max ...

Page 13

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet ADDRESS A MS-0 CE# OE WE# HIGH-Z DQ 7-0 Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE EAD YCLE IMING 5555 ADDRESS WPH ...

Page 14

... Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE ATA OLLING IMING ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 2AAA 5555 ADDR CPH DATA ...

Page 15

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet ADDRESS A MS-0 CE# OE# WE Note Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE OGGLE IT IMING 5555 ADDRESS A MS-0 CE# OE WE# DQ 7-0 AA SW0 Note: The device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met ...

Page 16

... Table 14 Most significant address for SST39LF/VF080 and A 20 for SST39LF/VF016. FIGURE 10: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SIX-BYTE CODE FOR BLOCK-ERASE 2AAA 5555 5555 2AAA 55 ...

Page 17

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 7-0 AA SW0 Note: Device ID = D9H for SST39LF/VF016 D8H for SST39LF/VF080 FIGURE 11 OFTWARE NTRY AND THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ...

Page 18

... ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 FIGURE 13 OFTWARE XIT ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 2AAA 5555 IDA T WHP SW1 SW2 /CFI E XIT 18 Data Sheet 396 ILL F13.0 S71146-03-000 6/01 ...

Page 19

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 14 NPUT UTPUT TO DUT FIGURE 15 EST OAD XAMPLE ©2001 Silicon Storage Technology, Inc. ...

Page 20

... FIGURE 16 YTE ROGRAM LGORITHM ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Load Byte Address/Byte Data Wait for end of ...

Page 21

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 17 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read byte Read same No byte No Does DQ 6 match? ...

Page 22

... Address: 5555H Wait T IDA Read CFI data FIGURE 18: S ID/CFI C OFTWARE ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Command Sequence Load data: AAH Load data: AAH Address: 5555H Address: 5555H Load data: 55H Load data: 55H ...

Page 23

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 10H ...

Page 24

... Suffix1 SST39VFxxx - Valid combinations for SST39LF080 SST39LF080-55-4C-EI SST39LF080-55-4C-B3K Valid combinations for SST39VF080 SST39VF080-70-4C-EI SST39VF080-70-4C-B3K SST39VF080-90-4C-EI SST39VF080-90-4C-B3K SST39VF080-70-4I-EI SST39VF080-70-4I-B3K SST39VF080-90-4I-EI SST39VF080-90-4I-B3K Valid combinations for SST39LF016 SST39LF016-55-4C-EI SST39LF016-55-4C-B3K Valid combinations for SST39VF016 SST39VF016-70-4C-EI SST39VF016-70-4C-B3K SST39VF016-90-4C-EI ...

Page 25

... Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet PACKAGING DIAGRAMS Pin # 1 Identifier 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 CD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. ...

Page 26

... B3K ACKAGE ODE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 BOTTOM VIEW 4.00 6.00 ± 0.20 0. 1.10 ± 0.10 0.15 0.35 ± ...

Related keywords