4N50 Unisonic Technologies, 4N50 Datasheet

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4N50

Manufacturer Part Number
4N50
Description
Manufacturer
Unisonic Technologies
Datasheet

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Part Number:
4N50
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Part Number:
4N50L-TF3-T
Manufacturer:
UTC
Quantity:
1 317
4N50
4 Amps, 500 Volts
N-CHANNEL POWER MOSFET
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
* 4A, 500V, R
* High Switching Speed
* 100% Avalanche Tested
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1.Gate
Note: Pin Assignment: G: Gate D: Drain
The UTC 4N50 is an N-channel mode power MOSFET using
The UTC 4N50 is generally applied in high efficiency switch mode
ORDERING INFORMATION
DESCRIPTION
FEATURES
SYMBOL
4N50L-TA3-T
4N50L-TF3-T
Lead Free
DS(ON)
UNISONIC TECHNOLOGIES CO., LTD
=2.0Ω @ V
2.Drain
3.Source
Ordering Number
GS
=10V
4N50G-TA3-T
4N50G-TF3-T
Halogen Free
Preliminary
S: Source
TO-220F
Package
TO-220
G
G
1
Pin Assignment
1
1
D
D
2
Power MOSFET
S
S
3
TO-220F
TO-220
Packing
QW-R502-525.a
Tube
Tube
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4N50 Summary of contents

Page 1

... DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ...

Page 2

... ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous (T Drain Current Pulsed (Note 1) Avalanche Current (Note 1) Single Pulsed (Note 2) Avalanche Energy Repetitive (Note 3) Peak Diode Recovery dv/dt (Note 3) T =25°C C Power Dissipation Derate above 25°C Junction Temperature Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge ...

Page 4

... TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit 12V 200nF 50kΩ 300nF V GS 3mA Unclamped Inductive Switching Test Circuit 10V t P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary V GS Same Type as DUT 10V V DS DUT Unclamped Inductive Switching Waveforms ...

Page 5

... Peak Diode Recovery dv/dt Test Circuit & Waveforms dv/dt controlled (Driver (DUT (DUT) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary + DUT Driver Same Type as DUT G controlled by pulse period Gate Pulse Width D= Gate Pulse Period I , Body Diode Forward Current ...

Page 6

... UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

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