CED02N6 Chino-Excel Technology Corp, CED02N6 Datasheet
CED02N6
Available stocks
Related parts for CED02N6
CED02N6 Summary of contents
Page 1
... Gate-Source Voltage Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Derate above 25 C Operating and Storage Temperautre Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient CED02N6/CEU02N6 =10V DS(ON) D CED SERIES TO-251(l-PAK) Symbol V DS ...
Page 2
... CED02N6/CEU02N6 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE AVALANCHE RATING Single Pulse Drain-Source Avalanche Energy 6 Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance SWITCHING CHARACTERISTICS ...
Page 3
... Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 3.0 V =10,9,8,7V GS 2.5 2.0 1.5 1.0 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics CED02N6/CEU02N6 =25 C unless otherwise noted) C Condition Symbol b C ISS V =25V OSS f =1.0MH Z C RSS 0V, Is =2A ...
Page 4
... CED02N6/CEU02N6 600 500 400 Ciss 300 200 Coss 100 Crss Drain-to Source Voltage (V) DS Figure 3. Capacitance 1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 4 V =50V Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current ...
Page 5
... CED02N6/CEU02N6 15 V =480V = Qg, Total Gate Charge (nC) Figure 9. Gate Charge GEN G S Figure 11. Switching Test Circuit 2 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.01 0.1 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve ...