CED01N6 Chino-Excel Technology Corp, CED01N6 Datasheet
CED01N6
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CED01N6 Summary of contents
Page 1
... Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Rev 1. 2005.Decemcer CED01N6/CEU01N6 = 10V DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted Symbol V ...
Page 2
... Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 190mH 0.8A 50V Starting CED01N6/CEU01N6 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS GS D ...
Page 3
... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED01N6/CEU01N6 2.5 2.0 1.5 1.0 0.5 0.0 25 3.0 2.5 2.0 C iss 1.5 1.0 C oss 0.5 C rss 0.0 25 -100 125 150 Figure 6. Body Diode Forward Voltage -55 C ...
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... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve CED01N6/CEU01N6 R DS(ON Single Pulse - d(on) V OUT V OUT 10% 50 ...