CEP04N7 Chino-Excel Technology Corp, CEP04N7 Datasheet

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CEP04N7

Manufacturer Part Number
CEP04N7
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEP04N7G
Manufacturer:
CET
Quantity:
20
FEATURES
ABSOLUTE MAXIMUM RATINGS
2005.April
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
Super high dense cell design for extremely low R
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
CEB SERIES
TO-263(DD-PAK)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEP04N7
CEB04N7
CEI04N7
CEF04N7
Type
700V
700V
700V
700V
V
DSS
Parameter
Parameter
CEI SERIES
TO-262(I2-PAK)
a
- Derate above 25 C
R
3.5
3.5
3.5
3.5
DS(ON)
C
= 25 C
4A
4A
4A
4A
I
CEP SERIES
TO-220
D
d
@V
DS(ON)
10V
10V
10V
10V
T c = 25 C unless otherwise noted
GS
CEP04N7/CEB04N7
4 - 18
.
CEI04N7/CEF04N7
Symbol
Symbol
T
I
R
CEF SERIES
TO-220F
R
V
V
J
DM
P
I
,T
DS
GS
D
D
JC
JA
stg
e
TO-220/263/262
G
0.71
62.5
1.4
12
89
4
-55 to 150
Limit
Limit
700
30
TO-220F
http://www.cetsemi.com
0.28
3.6
12
35
65
D
4
S
d
d
Units
Units
W/ C
C/W
C/W
W
V
V
A
A
C

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CEP04N7 Summary of contents

Page 1

... Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a Drain Current-Pulsed Maximum Power Dissipation @ T - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2005.April CEP04N7/CEB04N7 CEI04N7/CEF04N7 10V 4A 10V 4A 10V d 4A 10V ...

Page 2

... Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f.Full package I = 2.5A . S(max) CEP04N7/CEB04N7 CEI04N7/CEF04N7 unless otherwise noted Symbol Test Condition 0V 250 µ ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP04N7/CEB04N7 CEI04N7/CEF04N7 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 -100 125 150 Figure 6. Body Diode Forward Voltage =150 ...

Page 4

... GS R GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEP04N7/CEB04N7 CEI04N7/CEF04N7 DS(ON = =150 C J Single Pulse - ...

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