HM534253BJ-8 Elpida Memory, Inc., HM534253BJ-8 Datasheet

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HM534253BJ-8

Manufacturer Part Number
HM534253BJ-8
Description
Manufacturer
Elpida Memory, Inc.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
HM534253BJ-8
Manufacturer:
HIT
Quantity:
4 350
Part Number:
HM534253BJ-8
Manufacturer:
HITACHI
Quantity:
4 350
Description
The HM534253B is a 1-Mbit multiport video RAM equipped with a 256-kword
512-word
asynchronously. It can transfer data between RAM and SAM. In addition, it has two modes to realize fast
writing in RAM. Block write and flash write modes clear the data of 4-word
(512-word
possible by dividing SAM into two split buffers equipped with 256-word
data to SAM which is not active, and enables a continuous serial access.
Features
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Multiport organization
Asynchronous and simultaneous operation of RAM and SAM capability
Access time
Cycle time
Low power
High-speed page mode capability
Mask write mode capability
Bidirectional data transfer cycle between RAM and SAM capability
Split transfer cycle capability
RAM: 256-kword 4-bit
SAM: 512-word 4-bit
RAM: 60 ns/70 ns/80 ns/100 ns max
SAM: 20 ns/22 ns/25 ns/25 ns max
RAM: 125 ns/135 ns/150 ns/180 ns min
SAM: 25 ns/25 ns/30 ns/30 ns min
Active
Standby
4-bit) respectively in one cycle of RAM. And the HM534253B makes split transfer cycle
4-bit SAM (serial access memory).
RAM: 413 mW max
SAM: 275 mW max
38.5 mW max
1 M VRAM (256-kword
HM534253B Series
Its RAM and SAM operate independently and
4-bit)
(Previous ADE-203-204D (Z))
4-bit each. This cycle can transfer
4-bit and the data of one row
4-bit dynamic RAM and a
E0165H10 (Ver. 1.0)
Jul. 6, 2001 (K)

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HM534253BJ-8 Summary of contents

Page 1

... High-speed page mode capability Mask write mode capability Bidirectional data transfer cycle between RAM and SAM capability Split transfer cycle capability Elpida Memory, Inc joint venture DRAM company of NEC Corporation and Hitachi, Ltd. 4-bit) E0165H10 (Ver. 1.0) (Previous ADE-203-204D (Z)) Jul. 6, 2001 (K) ...

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... Flash write mode capability 3 variations of refresh (8 ms/512 cycles) RAS-only refresh CAS-before-RAS refresh Hidden refresh TTL compatible Ordering Information Type No. Access Time HM534253BJ HM534253BJ HM534253BJ HM534253BJ-10 100 ns HM534253BZ HM534253BZ HM534253BZ HM534253BZ-10 100 ns Pin Arrangement HM534253BJ Series ...

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Pin Description Pin Name Function A0 – A8 Address inputs I/O0 – I/O3 RAM port data inputs/outputs SI/O0 – SI/O3 SAM port data inputs/outputs RAS Row address strobe CAS Column address strobe WE Write enable DT/OE Data transfer/output enable SC ...

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HM534253B Series Block Diagram Column Address Buffer Input Data Control Input Buffer I/O0 – I/ – A8 Row Address Refresh Buffer Counter Row Decoder Memory Array Serial Output Output Timing Generator Buffer Data Sheet E0165H10 Serial Address QSF ...

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Pin Functions RAS (input pin): RAS is a basic RAM signal active in low level and standby in high level. Row address and signals as shown in table 1 are input at the falling edge of RAS. The ...

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HM534253B Series I/O0 – I/O3 (input/output pins): I/O pins function as mask data at the falling edge of RAS (in mask write mode). Data is written only to high I/O pins. Data on low I/O pins are masked and internal ...

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Operation of HM534253B RAM Port Operation RAM Read Cycle (DT/OE high, CAS high and DSF low at the falling edge of RAS, DSF low at the falling edge of CAS) Row address is entered at the RAS falling edge and ...

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HM534253B Series High-Speed Page Mode Cycle (DT/OE high, CAS high and DSF low at the falling edge of RAS) High-speed page mode cycle reads/writes the data of the same row address at high speed by toggling CAS while RAS is ...

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Color Register Set Cycle RAS CAS Address Row WE DT/OE DSF Color Data I/O Set color register Note: 1. I/O Mask Data Low: Mask High: Non Mask Block Write Cycle (CAS high, DT/OE high and DSF low at the falling ...

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HM534253B Series Color Register Set Cycle RAS CAS Row Address WE DT/OE DSF I/O Color Data Note: 1. I/O WE I/O Mask Data Low High Don't care I/O Mask Data Low: Mask High: Non Mask Address Mask Data I/O0 Column0 ...

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SAM start address must be determined by read transfer cycle or pseudo transfer cycle (split transfer cycle isn’t available) before SAM access, after power on, and determined for each transfer cycle. Read Transfer Cycle (CAS high, DT/OE low, WE high ...

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HM534253B Series Write transfer cycle can transfer a row of data input by serial write cycle to RAM. The row address of data transferred into RAM is determined by the address at the falling edge of RAS. The column address ...

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Split read transfer cycle is set when CAS is high, DT/OE is low high and DSF is high at the falling edge of RAS. The cycle can be executed asyncronously with SC. However, t between SC rising and ...

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HM534253B Series RAS t (min) STS CAS Address DT/OE DSF 511 SC (255) Figure 6 Limitation in Split Transfer Split Write Transfer Cycle (CAS high, DT/OE low, WE low and DSF high at the falling edge of RAS) A continuous ...

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Serial Write Cycle If previous data transfer cycle is pseudo transfer cycle or write transfer cycle, SAM port goes into write mode. In this cycle, SI/O data is fetched into data register at the SC rising edge like in the ...

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HM534253B Series Recommended DC Operating Conditions ( +70°C) Parameter Symbol Supply voltage V CC Input high voltage V IH Input low voltage V IL Notes: 1. All voltage referred –3.0 V for pulse ...

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DC Characteristics ( +70°C, V HM534253B -6 -7 Parameter Symbol Min Max Min Max Min Max Min Max Unit Test Conditions Data I — 80 — CC6 transfer current I — 130 — CC12 Input I –10 ...

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HM534253B Series Test Conditions (cont – 4 100 pF Output Load (A) Note: 1. Including scope & jig Common Parameter Parameter Symbol Min Max Random read or write ...

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Common Parameter (cont) Parameter Symbol Min Max DSF to CAS setup time t FSC DSF to CAS hold time t CFH Data-in to CAS delay time t DZC Data- delay time t DZO Output buffer turn-off delay t ...

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HM534253B Series Write Cycle (RAM), Page Mode Write Cycle, Color Register Set Cycle Parameter Symbol Min Max Write command setup time t WCS Write command hold time t WCH Write command pulse width t WP Write command to RAS lead ...

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Read-Modify-Write Cycle Parameter Symbol Min Max Read-modify-write cycle time t RWC RAS pulse width (read- t RWS modify-write cycle) CAS to WE delay time t CWD Column address to WE delay t AWD time OE to data-in delay time t ...

Page 22

HM534253B Series Flash Write Cycle, Block Write Cycle Parameter Symbol Min Max CAS to data-in delay time t CDD OE to data-in delay time t ODD Read Transfer Cycle Parameter Symbol Min Max DT hold time referred to RAS t ...

Page 23

Read Transfer Cycle (cont) Parameter Symbol Min Max SC pulse width precharge time t SCP SC access time t SCA Serial data-out hold time t SOH Serial data-in setup time t SIS Serial data-in hold time t ...

Page 24

HM534253B Series Pseudo Transfer Cycle, Write Transfer Cycle Parameter Symbol Min Max SE setup time referred RAS SE hold time referred to RAS setup time referred to t SRS RAS RAS to SC delay ...

Page 25

Split Read Transfer Cycle, Split Write Transfer Cycle Parameter Symbol Min Max Split transfer setup time t STS Split transfer hold time t RST referred to RAS Split transfer hold time t CST referred to CAS Split transfer hold time ...

Page 26

HM534253B Series Serial Read Cycle, Serial Write Cycle Parameter Symbol Min Max Serial clock cycle time t SCC SC pulse width precharge width t SCP Access time from SC t SCA Access time from SE t SEA ...

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After power-up, pause for 100 µs or more and execute at least 8 initialization cycle (normal memory cycle or refresh cycle), then start operation. 17. When the serial write cycle is used, at least one SC pulse is required ...

Page 28

HM534253B Series Early Write Cycle RAS t CAS t t ASR RAH Address Row I/O (Output I/O Mask Data (Input DTS DTH DT/ FSR RFH DSF ...

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Read-Modify-Write Cycle RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output I/O Mask Data (Input DTS DTH DT/ RFH FSR DSF ...

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HM534253B Series Page Mode Write Cycle (Early Write) RAS t CSH t RCD CAS t t ASR t RAH ASC Address Row Column WCS WE *1 I/O (Output I/O ...

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RAS-Only Refresh Cycle RAS t CRP CAS t t ASR RAH Row Address t OFF1 I/O (Output) t CDD t I/O OFF2 (Input) t ODD t t DTS DTH DT/ FSR RFH DSF CAS-Before-RAS Refresh Cycle t RP ...

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HM534253B Series Hidden Refresh Cycle RAS t RCD CAS t RAD t t ASR t RAH t Address Row t RCS WE I/O (Output) t DZC I/O (Input) t DZO t t DTS DTH DT/ RFH FSR t ...

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Color Register Set Cycle (Delayed Write) RAS CAS t t ASR RAH Address Row I/O (Output) I/O (Input) t DTS DT/ FSR RFH DSF Color Register Read Cycle RAS t CAS t t ASR RAH ...

Page 34

HM534253B Series Flash Write Cycle RAS t CRP CAS Address WE t CDD t OFF1 I/O (Output) t OFF2 t ODD I/O (Input) t DTS DT/OE DSF Block Write Cycle RAS t CSH t RCD CAS t t ASR RAH ...

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Page Mode Block Write Cycle RAS t CSH t RCD CAS ASR RAH ASC Column Row Address A2- I/O (Output I/O Address I/O Mask Mask ...

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HM534253B Series Read Transfer Cycle (1) RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output) t DTS DT/ RFH FSR DSF t SCC SC t SCA t SOH ...

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Read Transfer Cycle (2) RAS t RCD CAS t RAD t t ASR RAH Address Row I/O (Output DTS DTH DT/ FSR RFH DSF t SRS SI/O t ...

Page 38

HM534253B Series Pseudo Transfer Cycle RAS t RCD CAS t t RAH ASR Address Row I/O (Output) t DTS t DTH DT/ FSR RFH DSF t SEZ ...

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Write Transfer Cycle RAS t RCD CAS t t RAH ASR Address Row I/O (Output DTS DTH DT/ FSR RFH DSF SRS ...

Page 40

HM534253B Series Split Read Transfer Cycle RAS t CRP CAS t ASR Address Row OFF1 I/O (Output) t DTS DT/OE t FSR DSF Low SE t STS n SC 511 (n+255) (255) t SCA t SOH ...

Page 41

Split Write Transfer Cycle RAS CAS t ASR Address Row OFF1 I/O (Output) t DTS DT/OE t FSR DSF Low SE t STS n SC 511 (n+255) (255) SI/O (Output SIS SIH SI/O Valid ...

Page 42

HM534253B Series Serial Read Cycle SE t SCC SCP SC t SCA t SOH SI/O Valid Sout (Output) Serial Write Cycle t SWH SE t SCC SIS SIH SI/O Valid Sin (Input) ...

Page 43

... Package Dimensions HM534253BJ Series (CP-28D) 18.17 18.54 Max 28 1 0.74 1.30 Max 0.43 0.10 0.41 0.08 Dimension including the plating thickness Base material dimension Data Sheet E0165H10 15 14 9.40 1.27 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) HM534253B Series Unit: mm 0.25 CP-28D Conforms Conforms 1. ...

Page 44

HM534253B Series HM534253BZ Series (ZP-28) 35.58 36.57 Max 1 + 0.08 0.50 – 0.12 0. 1.27 1.045 Max Hitachi Code JEDEC EIAJ Weight (reference value) Data Sheet E0165H10 Unit 0.10 0.25 – 0.05 2.54 ZP-28 ...

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... Cautions 1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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