N02L163WN1AB-55I NanoAmp Solutions, Inc., N02L163WN1AB-55I Datasheet

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N02L163WN1AB-55I

Manufacturer Part Number
N02L163WN1AB-55I
Description
Manufacturer
NanoAmp Solutions, Inc.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
N02L163WN1AB-55I
Manufacturer:
SOLUTION
Quantity:
241
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
N02L163WN1AB
N02L163WN1AT
N02L163WN1AB1
N02L163WN1AT2
Part Number
44 - TSOP II Green
48 - BGA Pb-Free
Package Type
44 - TSOP II
48 - BGA
o
C to +85
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
o
C and is
(DOC# 14-02-014 REV L ECN# 01-1000)
-40
Temperature
Operating
o
C to +85
o
C 2.3V - 3.6V
Features
• Single Wide Power Supply Range
• Very low standby current
• Very low operating current
• Very low Page Mode operating current
• Simple memory control
• Low voltage data retention
• Very fast output enable access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
Supply
Power
(Vcc)
2.3 to 3.6 Volts
2.0µA at 3.0V (Typical)
2.0mA at 3.0V and 1µs (Typical)
0.8mA at 3.0V and 1µs (Typical)
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Vcc = 1.8V
30ns OE access time
able
55ns @ 2.7V
70ns @ 2.3V
Speed
N02L163WN1A
Current (I
Standby
Typical
2 µA
SB
),
2 mA @ 1MHz
Current (Icc),
Operating
Typical
1

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N02L163WN1AB-55I Summary of contents

Page 1

... SRAMs. Product Family Part Number Package Type N02L163WN1AB 48 - BGA N02L163WN1AT 44 - TSOP II N02L163WN1AB1 48 - BGA Pb-Free N02L163WN1AT2 44 - TSOP II Green The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • ...

Page 2

... NanoAmp Solutions, Inc. Pin Configurations PIN ONE I/O I I I VCC 11 VSS 34 VSS 12 E VCC 33 V I ...

Page 3

... NanoAmp Solutions, Inc. Functional Block Diagram Word Address Address Inputs Decode Logic Page Address Address Inputs Decode A4 - A16 Logic CE WE Control OE Logic UB LB Functional Description When UB and LB are in select mode (low), I/O are affected as shown ...

Page 4

... NanoAmp Solutions, Inc. Absolute Maximum Ratings Item Voltage on any pin relative to V Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied ...

Page 5

... NanoAmp Solutions, Inc. Power Savings with Page Mode Operation ( Page Address (A4 - A16 ) Word Address ( LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature ...

Page 6

... NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature Timing Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output ...

Page 7

... NanoAmp Solutions, Inc. Timing of Read Cycle ( Address Previous Data Valid Data Out Timing Waveform of Read Cycle (WE= V Address CE OE LB, UB High-Z Data Out The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com ...

Page 8

... NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) Address CE LB High-Z Data In Data Out Timing Waveform of Write Cycle (CE Control) Address CE LB Data In Data Out The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. ...

Page 9

... NanoAmp Solutions, Inc. 44-Lead TSOP II Package (T44) 10.16±0.13 0.80mm REF DETAIL B 0.20 0.00 Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 18.41±0.13 11.76±0.20 0.45 0.30 1.10±0.15 0.80mm REF ...

Page 10

... NanoAmp Solutions, Inc. Ball Grid Array Package D A1 BALL PAD CORNER (3) TOP VIEW K TYP J TYP BOTTOM VIEW Dimensions (mm 6±0.10 8±0.10 0.375 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 0.28±0.05 1.24±0.10 E SIDE VIEW 1 ...

Page 11

... Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur- poses only and they vary depending upon specific applications ...

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