SAM9XE256 Atmel Corporation, SAM9XE256 Datasheet - Page 131

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SAM9XE256

Manufacturer Part Number
SAM9XE256
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9XE256

Flash (kbytes)
256 Kbytes
Pin Count
217
Max. Operating Frequency
180 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
2
Uart
6
Ssc
1
Ethernet
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
Yes
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
312
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.65 to 1.95
Fpu
No
Mpu / Mmu
No / Yes
Timers
6
Output Compare Channels
6
Input Capture Channels
6
32khz Rtc
Yes
Calibrated Rc Oscillator
No
ARM DDI0198D
ARM926EJ-S
Optimizing for speed
Figure 5-15 on page 5-24 shows how to produce a large memory from two smaller
RAM blocks if you are optimizing for speed. Separate write enable control is required
for each RAM block:
WE_bank0 = ~DRADDR[14] & DRnRW
WE_bank1 = DRADDR[14] & DRnRW
No logic is added to the critical DRCS path, but both RAMs are enabled whenever
DRCS is asserted, resulting in higher power consumption.
DRADDR[17:0]
DRWD[31:0]
DRWBL[3:0]
DRSIZE[3:0]
DRRD[31:0]
Copyright © 2001-2003 ARM Limited. All rights reserved.
DRWAIT
DRnRW
DRIDLE
DRSEQ
DRCS
b1000
DRADDR[14]
CLK
DIN[31:0]
CLK
WE
CS DOUT[31:0]
RAM 64KB
A[13:0]
Bank 1
DRADDR[13:0]
BW[3:0]
Figure 5-14 Optimizing for power
Tightly-Coupled Memory Interface
DIN[31:0]
CLK
WE
CS DOUT[31:0]
RAM 64KB
A[13:0]
Bank 0
DRADDR[13:0]
BW[3:0]
5-23

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