BT151S-500L NXP Semiconductors, BT151S-500L Datasheet - Page 6

• Manufacturer Part Number: BT151S-500L
• Description: Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high surge current capability and high thermal cyclin
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BT151S_SER_L_R_5
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise stated.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
V
Figure 10
V
Figure 11
I
I
I
T
V
V
V
exponential waveform; see
I
I
V
I
(dI
R
T
T
T
TM
G
TM
j
D
D
D
D
R
DM
DM
GK
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
R
gate open circuit
= 23 A; see
= 100 mA; V
= 100 mA; V
= 125 C
= 100 mA; dI
T
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 40 A; V
= 20 A; V
/dt)
GK
= 0.67
= 0.67
= 100
DRM(max)
RRM(max)
= 100
M
= 30 A/ s; dV
Rev. 05 — 9 October 2006
T
GT
GT
D
R
= 100 mA; see
V
V
Figure 9
= 100 mA; see
= 100 mA; see
D
D
= V
= 25 V;
; T
; T
DRM(max)
DRM(max)
G
= 12 V; see
= V
/dt = 5 A/ s
j
j
DRM(max)
= 125 C
= 125 C
DRM(max)
D
; T
; T
/dt = 50 V/ s;
j
j
;
= 125 C;
= 125 C;
Figure 12
;
Figure 8
Figure 7
BT151S series L and R
Min
-
-
-
-
-
-
-
-
-
0.25
-
-
200
50
-
-
Typ
2
2
2
2
2
10
7
1.4
0.6
0.4
0.1
0.1
1000
130
2
70
© NXP B.V. 2006. All rights reserved.
Max
5
15
5
15
15
40
20
1.75
1.5
-
0.5
0.5
-
-
-
-
Thyristors
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
mA
V/ s
V/ s
s
s
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