BT131-600D NXP Semiconductors, BT131-600D Datasheet - Page 2

• Manufacturer Part Number: BT131-600D
• Description: Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT131_SER_D_E
Product data sheet
Type number
BT131-600D
BT131-600E
BT131-800D
BT131-800E
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
GM
G(AV)
t
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/s.
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
Ordering information
Limiting values
2
t for fusing
BT131-600D, BT131-600E
BT131-800D, BT131-800E
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
All information provided in this document is subject to legal disclaimers.
Conditions
all conduction angles;
T
half sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
lead
G
t = 20 ms
t = 16.7 ms
T2+ G+
T2+ G
T2 G
T2 G+
/dt = 200 mA/s
= 1.5 A; I
Rev. 3 — 3 November 2011
= 51.2 C; see
Figure 2
G
= 200 mA;
j
= 25 C prior to
Figure
and
3
1,
BT131 series D and E
4
and
5
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
Max
600
800
1
12.5
13.7
0.78
50
50
50
10
2
5
0.1
+150
125
© NXP B.V. 2011. All rights reserved.
Triacs logic level
Version
SOT54
Unit
V
V
A
A
A
A
A/s
A/s
A/s
A/s
A
W
W
C
C
2
s
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