BYW29ED-200 NXP Semiconductors, BYW29ED-200 Datasheet - Page 3

Ultrafast power diode in a SOT428 (DPAK) surface-mountable package

BYW29ED-200

Manufacturer Part Number
BYW29ED-200
Description
Ultrafast power diode in a SOT428 (DPAK) surface-mountable package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
November 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
SYMBOL PARAMETER
V
j
R
rr1
rr2
= 25 ˚C unless otherwise specified
F
fr
C
th j-mb
th j-a
rr
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
Electrostatic discharge
capacitor voltage
CONDITIONS
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
CONDITIONS
I
I
I
V
V
I
I
I
I
F
F
F
F
F
F
F
R
R
= 8 A; T
= 8 A
= 20 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
= V
= V
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
RWM
RWM
; T
j
R
R
F
= 150˚C
/dt = 10 A/µs
≥ 30 V; -dI
≥ 30 V; -dI
j
R
= 100˚C
2
= 1 A; I
rec
F
F
/dt = 20 A/µs
/dt = 100 A/µs
= 0.25 A
BYW29EB, BYW29ED series
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
Product specification
TYP. MAX. UNIT
TYP. MAX. UNIT
0.92
0.8
1.1
0.2
50
20
15
2
4
1
-
MAX.
8
0.895
1.05
2.7
1.3
0.6
10
11
25
20
-
-
Rev 1.300
UNIT
K/W
K/W
kV
mA
µA
nC
ns
ns
V
V
V
V

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