BUK7528-100A NXP Semiconductors, BUK7528-100A Datasheet - Page 4

• Manufacturer Part Number: BUK7528-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7528-100A
Product data sheet
Fig 3.
Fig 5.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
1
mb
R
DS(on)
= 25 °C; I
= V
D.C.
DS
10
DM
/ I
D
is single pulse
10
I
(A)
AV
10
2
t
10 μs
100 μs
1 ms
10 ms
100 ms
p
10
1
2
10
= 1 μs
V
−3
All information provided in this document is subject to legal disclaimers.
DS
003aaf153
T
(V)
j
prior to avalanche = 150 °C
10
10
Rev. 2 — 26 April 2011
3
−2
10
−1
Fig 4.
WDSS
(%)
120
80
40
0
1
20
avalanche energy rating; avalanche energy as a
function of mounting base temperature
I
Normalised drain-source non-repetitive
D
t
25 °C
AV
N-channel TrenchMOS standard level FET
= 75 A; unclamped inductive load
003aaf169
(ms)
10
60
BUK7528-100A
100
140
© NXP B.V. 2011. All rights reserved.
T
(mb)
003aaf168
(°C)
180
4 of 13