BUK7528-55A,127 NXP Semiconductors, BUK7528-55A,127 Datasheet

MOSFET N-CH 55V 42A TO220AB

BUK7528-55A,127

Manufacturer Part Number
BUK7528-55A,127
Description
MOSFET N-CH 55V 42A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7528-55A127.pdf (9 pages)

Specifications of BUK7528-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1165pF @ 25V
Power - Max
99W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
99000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056257127
BUK7528-55A
BUK7528-55A
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
available in TO220AB and SOT404 .
Using ’trench’ technology which
features
resistance. It is intended for use in
automotive and general purpose
switching applications.
PINNING
TO220AB & SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
June 2000
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
R
tab/mb drain
D
D
DM
V
stg
DS
DGR
tot
th j-mb
th j-a
th j-a
PIN
GS
1
2
3
, T
j
DESCRIPTION
gate
drain
source
very
enhancement
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
low
transistor
on-state
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
3
SOT404
BUK7628-55A
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
in free air
Minimum footprint, FR4
board
mb
mb
mb
mb
mb
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
tab
TO220AB
BUK7528-55A
1 2 3
V
GS
= 10 V
SYMBOL
TYP.
MIN.
- 55
60
50
-
-
-
-
-
-
-
-
g
MAX.
Product specification
175
55
41
99
28
MAX.
MAX.
BUK7528-55A
BUK7628-55A
168
175
1.5
55
55
20
42
30
99
-
-
d
s
Rev 1.100
UNIT
UNIT
K/W
K/W
K/W
UNIT
˚C
W
m
V
V
V
A
A
A
˚C
W
V
A

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BUK7528-55A,127 Summary of contents

Page 1

... DS(ON) resistance V GS PIN CONFIGURATION tab SOT404 TO220AB BUK7528-55A BUK7628-55A CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air Minimum footprint, FR4 board 1 Product specification BUK7528-55A BUK7628-55A MAX. UNIT 175 = SYMBOL MIN. MAX. UNIT - 168 - 175 TYP. MAX. UNIT - 1.5 K K/W ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7528-55A BUK7628-55A MIN. TYP. MAX. UNIT 4 0. ...

Page 3

... CONDITIONS 1000 100 10 1 120 140 160 180 = f 0.1 0.01 0.000001 120 140 160 180 Product specification BUK7528-55A BUK7628-55A MIN. TYP ˚ RDS(on) = VDS 10us 100 D. 100 100 VDS / V Fig.3. Safe operating area & f single pulse; parameter Zth / (K/ 0.5 0.2 0 0.05 ...

Page 4

... 8 9 ˚C. Fig.9. Typical transconductance 2.5 1.5 0 ˚C. Fig.10. Normalised drain-source on-state resistance Product specification BUK7528-55A BUK7628-55A ˚C = 175 VGS/V Fig.8. Typical transfer characteristics conditions parameter gfs / f(I ); conditions Rds(on) normlised to 25degC 2 1 -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚ ...

Page 5

... Ciss Coss 100 Fig.16. Normalised avalanche energy rating. iss oss rss = MHz 5 Product specification BUK7528-55A BUK7628-55A VGS / V VDS= 14V VDS= 44V f(Q ); conditions parameter 175 Tj / ˚ 0.0 0.5 VSDS / V 1.0 Fig.15. Typical reverse diode current. = f(V ); conditions parameter T ...

Page 6

... Philips Semiconductors TrenchMOS transistor Standard level FET L VGS 0 RGS Fig.17. Avalanche energy test circuit 0 DSS D DSS June 2000 VDD + VDS - VGS -ID/100 T.U. shunt BV V DSS DD 6 Product specification BUK7528-55A BUK7628-55A + RD VDS - RG T.U.T. Fig.18. Switching test circuit. VDD Rev 1.100 ...

Page 7

... Note 1. Terminals in this zone are not tinned. REFERENCES OUTLINE VERSION IEC JEDEC SOT78 TO-220 Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7528-55A BUK7628-55A scale ( max. 10.3 15.0 3.30 3 ...

Page 8

... Epoxy meets UL94 V0 at 1/8". June 2000 2 scale max. 0.85 0.64 1.60 10.30 2.90 15.40 11 2.54 0.60 0.46 1.20 9.70 2.10 14.80 REFERENCES IEC JEDEC EIAJ 8 Product specification BUK7528-55A BUK7628-55A 2 -PAK); 3 leads SOT404 mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.100 ...

Page 9

... Philips for any damages resulting from such improper use or sale. June 2000 11.5 9.0 2.0 3.8 5.08 Fig.21. SOT404 : soldering pattern for surface mounting. 9 Product specification BUK7528-55A BUK7628-55A 17.5 Rev 1.100 ...

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