PSMN012-80PS NXP Semiconductors, PSMN012-80PS Datasheet
PSMN012-80PS
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PSMN012-80PS Summary of contents
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... PSMN012-80PS N-channel mΩ standard level MOSFET Rev. 02 — 25 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... SC-46 TO-220AB PSMN012-80PS_2 Product data sheet N-channel mΩ standard level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 02 — 25 June 2009 PSMN012-80PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...
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... j(init Ω; unclamped R GS 003aad009 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 25 June 2009 PSMN012-80PS Min Max - - Figure 3 - 295 - 148 -55 175 -55 175 - 74 - 295 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN012-80PS_2 Product data sheet N-channel mΩ standard level MOSFET DC 10 Conditions see Figure Rev. 02 — 25 June 2009 PSMN012-80PS 003aad300 10 μs 100 μ 100 ( Min Typ ...
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... GS see Figure 14; see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 02 — 25 June 2009 PSMN012-80PS Min Typ Max Unit 4 µA ...
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... Drain-source on-state resistance as a function of drain current; typical values 003aad031 4000 C (pF) 3000 25 °C 2000 (V) GS Fig 8. Input and reverse transfer capacitances as a function of gate-source voltage; typical values Rev. 02 — 25 June 2009 PSMN012-80PS Min Typ Max - 0.86 1 003aad030 5 ...
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... V GS(th) (V) max − (V) GS Fig 12. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 25 June 2009 PSMN012-80PS 003aad038 (V) GS 003aad280 max typ min 0 60 120 180 T (°C) j © NXP B.V. 2009. All rights reserved. ...
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... T (°C) j 003aad033 (pF (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 25 June 2009 PSMN012-80PS GS1 GS2 G(tot) 003aaa508 003aad034 C iss C oss C rss ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN012-80PS_2 Product data sheet N-channel mΩ standard level MOSFET 003aad032 100 175 ° ° 0.3 0.6 0.9 Rev. 02 — 25 June 2009 PSMN012-80PS 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 25 June 2009 PSMN012-80PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. SOT78 ...
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... Various changes to content. PSMN012-80PS_1 20090609 PSMN012-80PS_2 Product data sheet N-channel mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 25 June 2009 PSMN012-80PS Supersedes PSMN012-80PS_1 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 25 June 2009 PSMN012-80PS © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN012-80PS_2 All rights reserved. Date of release: 25 June 2009 ...