PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet

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PSMN012-80BS,118

Manufacturer Part Number
PSMN012-80BS,118
Description
MOSFET N-CH 80 V 11MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN012-80BS118.pdf (14 pages)

Specifications of PSMN012-80BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
73 V
Gate-source Breakdown Voltage
1 V
Continuous Drain Current
74 A
Resistance Drain-source Rds (on)
11 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
148 W
Factory Pack Quantity
800
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN012-80BS
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
V
see
V
V
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
= 25 °C; V
= 25 °C; see
Figure
= 10 V; I
= 10 V; I
= 10 V; T
≤ 80 V; R
14; see
j
D
D
≤ 175 °C
j(init)
GS
GS
= 15 A; T
= 25 A; V
= 50 Ω; unclamped
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
j
DS
= 25 °C
= 40 V;
D
= 74 A;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
9
9.4
-
175
Max
80
74
148
11
-
100
Unit
V
A
W
°C
mΩ
nC
mJ

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PSMN012-80BS,118 Summary of contents

Page 1

... PSMN012-80BS N-channel mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... T pulsed ° ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS Graphic symbol mbb076 3 Version SOT404 Min Max - kΩ -20 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS 0 50 100 150 T 003aad300 10 μs 100 μ 100 ( © ...

Page 4

... Product data sheet N-channel mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS Min Typ Max - 0. 003aad007 t p δ = ...

Page 5

... 4.7 Ω R G(ext ° see Figure /dt = 100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS Min Typ Max 4 ...

Page 6

... V (V) DS Fig 6. 003aad031 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS 25 5 DSon (mΩ ( 100 150 Drain-source on-state resistance as a function of drain current; typical values ...

Page 7

... Fig 10. Drain-source on-state resistance as a function 03aa35 V typ max (V) GS Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS 25 R DSon (mΩ gate-source voltage; typical values ...

Page 8

... T (°C) j Fig 14. Gate charge waveform definitions 003aad033 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS 003aad032 = 25 ° 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN012-80BS v.2 20120301 • Modifications: Status changed from objective to product. • Various changes to content. PSMN012-80BS v.1 20111024 PSMN012-80BS Product data sheet N-channel mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN012-80BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2012 Document identifier: PSMN012-80BS ...

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