PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN012-80BS,118
• Description: MOSFET N-CH 80 V 11MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 74 A
• Resistance Drain-source Rds (on): 11 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN012-80BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
(S)
120
100
g
80
60
40
20
−1
−2
−3
−4
−5
−6
fs
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
2
40
min
60
typ
4
max
V
80
All information provided in this document is subject to legal disclaimers.
GS
003aad036
I
(V)
D
03aa35
(A)
100
6
Rev. 2 — 1 March 2012
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(V)
R
(mΩ)
DSon
25
20
15
10
5
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
0
5
0
PSMN012-80BS
10
60
max
min
typ
120
15
© NXP B.V. 2012. All rights reserved.
V
003aad038
003aad280
T
GS
j
(°C)
(V)
180
20
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