PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet - Page 9
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PSMN012-80BS,118
Manufacturer Part Number
PSMN012-80BS,118
Description
MOSFET N-CH 80 V 11MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN012-80BS118.pdf
(14 pages)
Specifications of PSMN012-80BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
73 V
Gate-source Breakdown Voltage
1 V
Continuous Drain Current
74 A
Resistance Drain-source Rds (on)
11 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
148 W
Factory Pack Quantity
800
NXP Semiconductors
PSMN012-80BS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0
All information provided in this document is subject to legal disclaimers.
0.3
Rev. 2 — 1 March 2012
175 °C
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
0.6
0.9
T
j
= 25 °C
003aad032
V
SD
(V)
1.2
PSMN012-80BS
© NXP B.V. 2012. All rights reserved.
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