PSMN015-100B NXP Semiconductors, PSMN015-100B Datasheet - Page 2

• Manufacturer Part Number: PSMN015-100B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN015-100B_6
Product data sheet
Pin
1
2
3
mb
Type number
PSMN015-100B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
It is not possible to make a connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
T
V
V
t
T
T
t
V
unclamped; t
p
p
j
j
mb
mb
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
Rev. 06 — 17 December 2009
j
p
≤ 175 °C
j
mb
mb
j(init)
= 0.11 ms; R
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
[1]
= 25 °C; I
mb
mb
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 25 °C
Simplified outline
GS
GS
D
= 20 kΩ
= 36 A; V
SOT404 (D2PAK)
Figure 1
= 50 Ω
Figure 1
1
Figure 3
mb
2
and
sup
3
≤ 50 V;
3
PSMN015-100B
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
100
100
20
60.8
75
240
300
175
175
75
240
320
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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