PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 7

• Manufacturer Part Number: PSMN1R5-25YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
I
10
10
10
10
DSon
D
12
10
−3
−4
−5
−6
8
6
4
2
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
2
0.5
4
1
min
6
1.5
typ
8
2
V
003aac908
003aab271
max
V
GS
GS
(V)
(V)
2.5
10
Rev. 01 — 16 June 2009
Fig 10. Input and reverse transfer capacitances as a
Fig 12. Gate-source threshold voltage as a function of
(pF)
V
8000
6000
4000
2000
C
GS (th)
(V)
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
2
C
C
iss
rss
N-channel TrenchMOS logic level FET
4
0
PSMN1R5-25YL
max
typ
min
60
6
120
8
© NXP B.V. 2009. All rights reserved.
V
003aac907
003a a c337
T
GS
j
(°C)
(V)
180
10
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