PSMN1R5-40ES NXP Semiconductors, PSMN1R5-40ES Datasheet - Page 8

• Manufacturer Part Number: PSMN1R5-40ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R5-40ES
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(m Ω )
(A)
I
10
10
10
10
10
10
D
DSon
−1
−2
−3
−4
−5
−6
8
6
4
2
0
gate-source voltage
of drain current; typical values
0
0
20
4.6
2
min
40
typ
4
4.8
60
max
V
V
GS
All information provided in this document is subject to legal disclaimers.
GS
003aaf326
I
D
(V) = 5
(V)
(A)
03aa35
5.2
10
20
80
6
Rev. 01 — 19 April 2011
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Fig 12. Normalized drain-source on state resistance
Fig 14. Gate charge waveform definitions
a
2.5
1.5
0.5
2
1
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN1R5-40ES
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2011. All rights reserved.
003a a f322
003aaa508
T
j
(°C)
180
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