PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet - Page 7

• Manufacturer Part Number: PSMN2R0-60ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN2R0-60ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
(S)
g
fs
250
200
150
100
50
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
…continued
60
90
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003aaf742
I
D
(A)
Conditions
I
see
I
V
I
V
120
S
S
S
GS
GS
Rev. 02 — 19 April 2011
= 25 A; V
= 25 A; dI
= 25 A; dI
Figure 17
= 0 V; V
= 0 V; V
N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK
GS
S
S
DS
DS
/dt = -100 A/µs;
/dt = -100 A/µs;
Fig 6.
= 0 V; T
= 30 V
= 30 V
(A)
I
D
80
60
40
20
0
j
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
= 25 °C;
0
T
j
= 175 ° C
2
PSMN2R0-60ES
Min
-
-
-
4
Typ
0.8
57
80
T
j
= 25 ° C
V
© NXP B.V. 2011. All rights reserved.
GS
003aaf743
(V)
Max
1.2
-
-
6
Unit
V
ns
nC
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