PSMN7R0-100XS NXP Semiconductors, PSMN7R0-100XS Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PSMN7R0-100XS
Preliminary data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
I
(S)
g
D
200
160
120
fs
200
160
120
80
40
80
40
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
1
40
6.0
…continued
2
80
V
GS
3
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
Conditions
I
see
I
V
I
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S
S
(V) = 5.0
003aag579
D
003aag577
V
DS
= 10 A; V
= 10 A; dI
(A)
DS
Figure 18
= 50 V
(V)
4.2
4.8
4.6
4.4
120
Rev. 2 — 21 October 2011
4
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 7.
Fig 9.
j
= 25 °C;
R
(m Ω )
(A)
I
DSon
D
120
100
20
16
12
80
60
40
20
8
4
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
GS
4
0
= 0 V;
8
PSMN7R0-100XS
2
T
j
= 175 ° C
Min
-
-
-
12
4
Typ
0.76
64
167
16
T
© NXP B.V. 2011. All rights reserved.
j
V
= 25 ° C
003aag578
003aag580
V
GS
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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