BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 7

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G20-180PN_3
Product data sheet
Fig 9.
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with
See
Component layout for 1805 MHz and 1880 MHz test circuit
C1
Table 9
R1
INPUT
for list of components.
Table 9.
For test circuit, see
[1]
[2]
[3]
C3 C9
C2
Component
C1
C2, C3
C4, C5, C6
C7
C8, C9, C10, C11
C12, C13
C14
R1
R2, R3
C8
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 180R or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
List of components
R1
TB
Figure 8
Description
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
AVX multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
chip resistor
R3
R2
Rev. 03 — 30 March 2009
and
Figure
9.
C13
C11
C5
BLF6G20-180PN
C14
C10 C12 C4
r
Value
6.2 pF
16 pF
18 pF
1.1 pF
4.7 F
220 nF
100 F; 63 V
33
8.2
= 3.5 and thickness = 0.76 mm.
C6
Power LDMOS transistor
R1
© NXP B.V. 2009. All rights reserved.
OUTPUT
[1]
[1]
[2]
[3]
[2]
001aai025
C7
TB
Remarks
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