BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 9

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF6G20-180PN_3
Product data sheet
Document ID
BLF6G20-180PN_3
BLF6G20-180PN_2
Modifications:
BLF6G20-180PN_1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Release date
20090330
20090121
20080428
•
•
Table 7 on page 3: Maximum adjacent channel power ratio changed
Table 8 on page 3: Minimum output peak-to-average ratio changed
Abbreviations
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Preliminary data sheet
Objective data sheet
Rev. 03 — 30 March 2009
Change notice
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-
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BLF6G20-180PN
Power LDMOS transistor
Supersedes
BLF6G20-180PN_2
BLF6G20-180PN_1
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© NXP B.V. 2009. All rights reserved.
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