BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet

40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz

BLF6G22L-40BN

Manufacturer Part Number
BLF6G22L-40BN
Description
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
40 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G22L-40BN
Power LDMOS transistor
Rev. 1 — 30 August 2010
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 2.5 W
Power gain = 19 dB (typ)
Efficiency = 16 %
ACPR = −50 dBc
Typical performance
case
= 25
°
C in a common source class-AB production test circuit.
f
(MHz)
2110 to 2170
Dq
of 345 mA:
V
(V)
28
DS
P
(W)
2.5
L(AV)
G
(dB)
19
p
Product data sheet
η
(%)
16
D
ACPR
(dBc)
−50
[1]

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BLF6G22L-40BN Summary of contents

Page 1

... BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF per carrier; ...

Page 2

... Parameter drain-source voltage gate-source voltage sense gate-source voltage storage temperature junction temperature Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor Simplified outline Graphic symbol [ ...

Page 3

... D ACPR PAR O [1] Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF 2167.5 MHz. 7.1 Ruggedness in class-AB operation The BLF6G22L-40BN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 345 mA BLF6G22L-40BN Product data sheet Characteristics C per section ...

Page 4

... ACPR D (dBc) (%) (W) L Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor 0 10 ACPR 20 ACPR 345 mA 2140 MHz ACPR at 5 MHz and at 10 MHz as function of load power ...

Page 5

... Fig 6. 8 PAR 345 mA 2140 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor 20 ACPR 30 40 ACPR 345 mA 2140 MHz. ...

Page 6

... Fig 9. 11 PAR 345 mA 2140 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor 30 40 ACPR 50 ACPR 345 mA 2140 MHz. DS ...

Page 7

... SMD resistor SMD resistor SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor 001aam467 60 D (%) ...

Page 8

... Typical impedance Z S (Ω) 3.3 − j12.2 4.5 − j12.8 10 − j15.3 gate Z S All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor C9 C10 C15 NXP BLF6G22L_40BN C11 Output = 3.5 F/m; thickness = 0.765 mm (Ω) 13 − ...

Page 9

... 9.65 9.65 9.65 9.65 1.14 17.12 9.40 9.40 9.40 9.40 0.89 16.10 0.38 0.38 0.38 0.38 0.045 0.674 0.37 0.37 0.37 0.37 0.035 0.634 References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor ( 3.00 3.30 1.70 20.45 9.91 15.24 2.69 2.92 1.45 20.19 9.65 0.118 0.130 0.067 ...

Page 10

... IMD LDMOS PAR PDPCH RF SMD VSWR W-CDMA 10. Revision history Table 11. Revision history Document ID BLF6G22L-40BN v.1 BLF6G22L-40BN Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel ElectroStatic Discharge InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 August 2010 BLF6G22L-40BN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22L-40BN All rights reserved. Date of release: 30 August 2010 ...

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