BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 3

• Manufacturer Part Number: BLF6G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF6G27-100_BLF6G27LS-100
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Symbol
V
V
I
T
T
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
C
D
DSS
DSX
GSS
j
fs
stg
j
DS
GS
(BR)DSS
GS(th)
th(j-case)
DS(on)
rs
= 25
°
C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
thermal resistance from
junction to case
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
Conditions
T
case
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 80 °C; P
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 5.25 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
GS(th)
GS(th)
L
D
= 100 W BLF6G27-100
DS
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 150 mA
= 5.25 A
= 28 V
= 28 V;
= 0 V
WiMAX power LDMOS transistor
Type
BLF6G27LS-100
Min
65
1.4
-
22.3
-
-
-
-
Min
-
−0.5
-
−65
-
Typ
-
2
-
27
-
10.5
0.1
2.4
© NXP B.V. 2010. All rights reserved.
Max
65
+13
29
+150
200
0.16
Max
-
2.4
5
-
450
-
-
Typ
0.68
0.5
Unit
V
V
A
°C
°C
3 of 14
Unit
K/W
K/W
Unit
V
V
μA
A
nA
S
Ω
pF