BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 6

• Manufacturer Part Number: BLF6G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27-100_BLF6G27LS-100
Product data sheet
Fig 3.
(dB)
G
p
19
18
17
16
15
14
2500
V
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
Power gain and drain efficiency as a function
of frequency; typical values
DS
= 28 V; I
G
η
7.3 Single carrier W-CDMA broadband performance at 14 W average
D
p
2550
Dq
= 900 mA; single carrier W-CDMA TM1
power
2600
2650
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aal781
2700
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
30
28
26
24
22
20
(%)
η
D
Fig 4.
ACPR
(dBc)
−35
−45
−55
−65
2500
V
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
ACPR at 5 MHz and at 10 MHz as a function of
frequency; typical values
DS
ACPR
ACPR
= 28 V; I
10M
5M
2550
Dq
WiMAX power LDMOS transistor
= 900 mA; single carrier W-CDMA TM1
2600
2650
© NXP B.V. 2010. All rights reserved.
f (MHz)
001aal782
2700
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