STR912FAZ44 STMicroelectronics, STR912FAZ44 Datasheet - Page 62

• Manufacturer Part Number: STR912FAZ44
• Description: 32-bit MCU
• Manufacturer: STMicroelectronics

Specifications of STR912FAZ44

• Arm966e-s Risc Core: Harvard architecture, 5-stage pipeline, Tightly-Coupled Memories (SRAM and Flash)

Electrical characteristics
7.4
Table 13.
1. Data based on bench measurements, not tested in production.
7.5
Table 14.
1. For V
2. Selection of V
3. For V
62/102
t
t
t
V
V
V
V
V
V
V
V
V
RINMIN
POR
RSO
DD_LVD+
DD_LVD-
DD_BRN
DDQ_LVD+
DDQ_LVD-
DDQ_BRN
DDQ_LVD+
DDQ_LVD-
DDQ_BRN
Symbol
condition is V
Symbol
DDQ
DDQ
(1.8V)
(1.8V)
(1.8V)
(3.0V)
(3.0V)
(3.3V)
(3.3V)
(3.0V) LVD threshold during V
(3.3V) LVD threshold during V
I/O voltage operating at 2.7 - 3.3V.
I/O voltage operating at 3.0 - 3.6V.
RESET_INn and power-on-reset characteristics
V
RESET_INn and power-on-reset characteristics
RESET_INn Valid Active Low
Power-On-Reset Condition
duration
RESET_OUT Duration
(Watchdog reset)
LVD electrical characteristics
V
LVD electrical characteristics
DDQ
DDQ
DDQ
DDQ
=2.7V - 3.3V.
operation range is made using configuration software from ST, or IDE from 3rd parties. The default
LVD threshold during V
LVD threshold during V
V
LVD threshold during V
V
LVD threshold during V
V
= 2.7 - 3.6V, V
= 2.7 - 3.6V, V
DD
DDQ
DDQ
Parameter
brown out warning threshold
brown out warning threshold
brown out warning threshold
Parameter
DD
DD
= 1.65 - 2V, T
= 1.65 - 2V, T
DD
DD
DDQ
DDQ
DDQ
DDQ
rise
fall
Doc ID 13495 Rev 6
rise
fall
rise
fall
V
time is less than
10ms: 0V to V
Test conditions
DDQ
,V
A
A
DD
= -40 / 85 °C unless otherwise specified.
= -40 / 85 °C unless otherwise specified.
conditions
ramp
Test
(1)(2)
(1)(2)
(1)(2)
(2)(3)
(2)(3)
(2)(3)
DD
one PCLK
Min
100
10
1.43
1.33
2.32
2.23
2.61
2.52
Min
(1)
Value
Typ
Value
1.50
1.40
1.65
2.45
2.35
2.65
2.75
2.65
2.95
Typ
Max
Max
1.58
1.47
2.57
2.46
2.89
2.78
STR91xFAxxx
Unit
Unit
ms
ns
ns
V
V
V
V
V
V
V