DS1265AB Maxim, DS1265AB Datasheet

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DS1265AB

Manufacturer Part Number
DS1265AB
Description
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits
Manufacturer
Maxim
Datasheet

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19-5616; Rev 11/10
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Unlimited write cycles
 Low-power CMOS operation
 Read and write access times of 70 ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
www.maxim-ic.com
absence of external power
loss
disconnected to retain freshness until power is
applied for the first time
(DS1265AB)
-40°C to +85°C, designated IND
CC
operating range (DS1265Y)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition occurs,
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A19
DQ0 - DQ7
V
GND
NC
CE
WE
OE
CC
36-Pin ENCAPSULATED PACKAGE
GND
DQ1
DQ2
DQ0
A18
A16
A14
A12
NC
NC
A7
A6
A5
A4
A3
A2
A1
A0
8M Nonvolatile SRAM
740-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DS1265Y/AB
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
CC

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DS1265AB Summary of contents

Page 1

... CC  Optional ±5% V operating range CC (DS1265AB)  Optional industrial temperature range of -40°C to +85°C, designated IND DESCRIPTION The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control ...

Page 2

... CC . Should the supply voltage decay, the NV SRAMs CC to RAM and disconnects the lithium energy source. CC exceeds 4.75 volts for the DS1265AB and 4.5 volts for the CC is first applied at a level greater than and access times are not ...

Page 3

... Write Protection Voltage (DS1265AB) Write Protection Voltage (DS1265Y) CAPACITANCE PARAMETER Input Capacitance Output Capacitance SYMBOL MIN TYP V 4.75 5 4 =5V ±5% for DS1265AB See Note 10) (V =5V ±10% for DS1265Y SYMBOL MIN TYP 1.0 CCS1 ...

Page 4

... WR1 t WR2 15 t ODW t 5 OEW DH1 t 10 DH2 DS1265Y/AB =5V ±5% for DS1265AB) CC =5V ±10% for DS1265Y) CC UNITS NOTES MAX ...

Page 5

TIMING DIAGRAM: WRITE CYCLE 1 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND DS1265Y/AB ...

Page 6

POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER V Fail Detect to and slew from slew from Valid to and Inactive ...

Page 7

... Outputs Open Cycle = 200ns for operating current All voltages are referenced to ground ORDERING INFORMATION PART TEMP RANGE DS1265AB-70+ 0°C to +70°C DS1265AB-70IND+ -40°C to +85°C DS1265Y-70+ 0°C to +70°C DS1265Y-70IND+ -40°C to +85°C +Denotes a lead(Pb)-free/RoHS-compliant package. PACKAGE INFORMATION For the latest package outline information and land patterns “ ...

Page 8

... REVISION HISTORY REVISION DATE Updated the storage information, soldering temperature, and lead temperature information in the Absolute Maximum Ratings section; removed the -100 MIN/MAX information from the AC Electrical 11/10 Characteristics table; updated the Ordering Information table (removed -100 parts and leaded -70 parts); replaced the package ...

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