AP1003BST Advanced Power Electronics Corp., AP1003BST Datasheet - Page 3
![The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible](/photos/42/35/423541/118ss_sml.png)
AP1003BST
Manufacturer Part Number
AP1003BST
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP1003BST.pdf
(4 pages)
Specifications of AP1003BST
Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Rds(on) / Max(m?) Vgs@4.5v
7.5
Qg (nc)
12
Qgs (nc)
3
Qgd (nc)
6
Id(a)
17.3
Pd(w)
2.2
Configuration
Single N
Package
GreenFET-MX
120
100
5.6
5.2
4.8
4.4
3.6
3.2
80
60
40
20
12
10
0
8
6
4
2
0
6
4
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
V
T
1
V
SD
DS
j
=150
4
GS
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
T
2
A
0.6
=25
6
o
C
T
0.8
I
D
A
3
=25
=11A
T
j
℃
1
=25
8
o
4
C
V
1.2
G
=4.0V
7.0V
6.0V
5.0V
10V
1.4
10
5
1.4
1.2
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
80
60
40
20
1
0
2
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=13A
=10V
Junction Temperature
v.s. Junction Temperature
V
1
T
DS
0
T
0
j
,Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
T
A
2
=150
50
50
o
C
3
AP1003BST
100
100
o
C)
o
4
C)
V
G
=4.0V
7.0V
6.0V
5.0V
10V
150
150
5
3