AP1003BST Advanced Power Electronics Corp., AP1003BST Datasheet - Page 4

• Manufacturer Part Number: AP1003BST
• Description: The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1003BST

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4.5
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 17.3
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-MX

AP1003BST
1000
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
T
Operation in this
10%
area limited by
90%
V
A
V
R
=25
DS
GS
DS(ON)
I
V
o
C
D
DS
V
V
=11A
0.1
8
t
Q
DS
=15V
DS
V
d(on)
G
=18V
DS
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
=24V
t
r
16
1
t
d(off)
24
10
t
f
100ms
100us
10ms
1ms
DC
1s
32
100
Fig10. Effective Transient Thermal Impedance
2000
1600
1200
800
400
0.001
0.01
0
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
V
Duty factor = 0.5
0.01
Single Pulse
0.05
0.2
0.1
G
5
0.001
Q
V
GS
DS
9
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
13
Charge
G
GD
0.1
17
1
P
DM
Duty Factor = t/T
Peak T
Rthja = 58℃/W
21
j
= P
t
DM
T
10
f=1.0MHz
x R
25
thjc
C
C
C
+ T
Q
C
iss
oss
rss
100
29
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