AP2313GN Advanced Power Electronics Corp., AP2313GN Datasheet - Page 3

• Manufacturer Part Number: AP2313GN
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2313GN

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 120
• Rds(on) / Max(m?) Vgs@4.5v: 160
• Rds(on) / Max(m?) Vgs@2.5v: 300
• Qg (nc): 5
• Qgs (nc): 1
• Qgd (nc): 2
• Id(a): -2.5
• Pd(w): 0.83
• Configuration: Single P
• Package: SOT-23

200
160
120
15
12
80
9
6
3
0
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
A
-V
=25
0.2
-V
-V
Reverse Diode
DS
1
SD
o
GS
, Drain-to-Source Voltage (V)
4
C
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
T
0.4
j
=150
2
o
C
0.6
6
3
0.8
T
I
A
V
D
8
=25
T
G
=-2A
4
= - 1. 5 V
j
=25
1
o
-3. 5 V
-5.0V
-4.5V
-2.5V
C
o
C
10
1.2
5
1.6
1.4
1.2
1.0
0.8
0.6
15
12
1.6
1.2
0.8
0.4
9
6
3
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
= 150
I
V
D
G
-V
= - 2.5 A
v.s. Junction Temperature
= -4.5V
1
Junction Temperature
T
DS
o
T
j
0
0
C
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
3
AP2313GN
100
100
o
V
C)
o
4
C)
G
= - 1. 5 V
-5.0V
-4.5V
-3.5V
-2.5V
150
150
5
3