AP2313GN Advanced Power Electronics Corp., AP2313GN Datasheet - Page 4

• Manufacturer Part Number: AP2313GN
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2313GN

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 120
• Rds(on) / Max(m?) Vgs@4.5v: 160
• Rds(on) / Max(m?) Vgs@2.5v: 300
• Qg (nc): 5
• Qgs (nc): 1
• Qgd (nc): 2
• Id(a): -2.5
• Pd(w): 0.83
• Configuration: Single P
• Package: SOT-23

AP2313GN
0.01
100
0.1
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
V
V
T
Single Pulse
GS
DS
A
V
=25
I
-V
DS
D
DS
=- 2 A
=-16V
o
Q
2
t
C
d(on)
, Drain-to-Source Voltage (V)
G
, Total Gate Charge (nC)
1
t
r
4
10
t
d(off)
6
1ms
10ms
100ms
1s
DC
t
f
100
8
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.01
Duty factor=0.5
0.05
0.001
G
0.1
0.2
5
Single Pulse
-V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
0.1
Q
Charge
G
GD
13
1
P
DM
Duty factor = t/T
Peak T
R
17
thja
= 360℃/W
10
j
t
= P
DM
T
x R
f=1.0MHz
21
thja
100
+ T
C
C
C
a
Q
rss
oss
iss
1000
25
4