AP2606AGY-HF Advanced Power Electronics Corp., AP2606AGY-HF Datasheet - Page 3

• Manufacturer Part Number: AP2606AGY-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2606AGY-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 7
• Pd(w): 2
• Configuration: Single N
• Package: SOT-26

40
30
20
10
50
40
30
20
0
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
1
V
V
Reverse Diode
V
SD
DS
T
4
T
GS
0.4
A
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
j
=150
=25
, Gate-to-Source Voltage (V)
2
o
o
C
0.6
C
3
6
I
T
0.8
D
A
= 5A
=25
T
4
o
j
C
1
=25
8
o
V
C
5
1.2
G
=4.0V
7.0V
6.0V
5.0V
10V
1.4
10
6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.2
0.8
0.6
0.4
40
30
20
10
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
T
I
V
D
A
D
G
=250uA
=150
=7A
=10V
T
j
v.s. Junction Temperature
Junction Temperature
V
1
o
, Junction Temperature (
T
DS
C
j
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
AP2606AGY-HF
50
50
3
o
C)
100
100
o
C )
4
V
G
=4.0V
7.0V
6.0V
5.0V
10V
150
150
5
3